We obtain expressions for the determination of the shear moduli of n-Ge and n-Si single crystals subjected to uniaxial deformation. The proposed method is based on the mechanism of redistribution of electrons between the minima of conduction bands of germanium and silicon subjected to uniaxial compressive deformation along the crystallographic directions [111] and [100]. By using the obtained expressions and the results of the measurements of longitudinal piezoresistance for these single crystals, we determine their shear moduli.
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Translated from Fizyko-Khimichna Mekhanika Materialiv, Vol. 53, No. 2, pp. 115–120, March–April, 2017.
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Shvab’yuk, V.І., Маtkova, A.V., Lun’ov, S.V. et al. A Method for the Determination of Shear Moduli for n-Ge and n-Si Single Crystals. Mater Sci 53, 257–263 (2017). https://doi.org/10.1007/s11003-017-0070-2
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DOI: https://doi.org/10.1007/s11003-017-0070-2