Abstract
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.
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Original Russian Text © A.I. Veinger, T.V. Tisnek, I.V. Kochman, V.I. Okulov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 172–176.
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Veinger, A.I., Tisnek, T.V., Kochman, I.V. et al. Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields. Semiconductors 51, 163–167 (2017). https://doi.org/10.1134/S1063782617020233
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DOI: https://doi.org/10.1134/S1063782617020233