Abstract
The distributions of hydrogen-containing donors in Ge1–xSix (0 ≤ x ≤ 0.06) alloys implanted with hydrogen ions with an energy of 200 and 300 keV and a dose of 1 × 1015 cm–2 are studied. It is established that, at the higher ion energy, the limiting donor concentration after postimplantation heat treatment (275°C) is attained within ~30 min and, at the lower energy, within ~320 min. In contrast to donors formed near the surface, a portion of hydrogen-containing donors formed upon the implantation of ions with the higher energy possess the property of bistability. The limiting donor concentration is independent of the ion energy, but decreases from 1.3 × 1016 to 1.5 × 1015 cm–3, as the Si impurity content in the alloy is increased from x = 0.008 to x = 0.062. It is inferred that the observed differences arise from the participation of the surface in the donor formation process, since the surface significantly influences defect-formation processes involving radiation-induced defects, whose generation accompanies implantation.
Similar content being viewed by others
References
V. V. Kozlovskii, Modification of Semiconductors with Proton Beams (Nauka, St. Petersburg, 2003) [in Russian].
Y. Ohmura, Y. Zohta, and M. Kanazava, Phys. Status Solidi A 15, 93 (1973).
Yu. V. Gorelkinskii, V. O. Sigle, and S. Takibaev, Phys. Status Solidi A 22, 55 (1974).
V. P. Markevich, L. Dobaczewski, K. Bonde Nielsen, V. V. Litvinov, A. N. Petukh, Yu. M. Pokotilo, N. V. Abrosimov, and A. R. Peaker, Thin Solid Films 517, 419 (2008).
N. V. Abrosimov, S. N. Rossolenko, W. Thieme, A. Gerhardt, and W. Schröder, J. Cryst. Growth 174, 182 (1997).
J. F. Ziegler, M. D. Ziegler, and J. P. Biersak, Nucl. Instrum. Methods Phys. Res. B 268, 1818 (2010).
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, A. R. Pieker, and N. V. Abrosimov, Tech. Phys. Lett. 34, 498 (2008).
Yu. Gorelkinskii and N. N. Nevinnyi, Nucl. Instrum. Methods Phys. Res. 209–210, 677 (1983).
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko, Semiconductors 39, 768 (2005).
Y. Tokuda, A. Ito, and M. Ohshima, Semicond. Sci. Technol. 13, 194 (1998).
R. Hazdra and V. Komarnitskyy, Solid State Phenom. 131–133, 201 (2008).
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko, Inorg. Mater. 45, 1205 (2009).
J. G. Laven, R. Rob, H. J. Schulze, F. J. Niedernostheide, W. Schustereder, and L. Frey, Solid State Sci. Technol. 2, 389 (2013).
A. R. Chelyadinskii, V. S. Varichenko, V. Yu. Yavid, and V. A. Burenkov, Poverkhnost’, No. 2, 110 (2004).
O. V. Aleksandrov and V. V. Kozlovskii, Semiconductors 42, 257 (2008).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Yu.M. Pokotilo, A.N. Petukh, V.V. Litvinov, V.P. Markevich, N.V. Abrosimov, A.S. Kamyshan, A.V. Giro, K.A. Solyanikova, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 8, pp. 1143–1145.
Rights and permissions
About this article
Cite this article
Pokotilo, Y.M., Petukh, A.N., Litvinov, V.V. et al. Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies. Semiconductors 50, 1122–1124 (2016). https://doi.org/10.1134/S1063782616080182
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616080182