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Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The time-resolved photoluminescence of GaAs/AlGaAs quantum-cascade structures under intense pulse excitation is studied. Aside from optical transitions between the ground electron and hole states of a system of two tunnel-coupled quantum wells, the photoluminescence spectrum at short times after the excitation pulse exhibits features corresponding to transitions between the excited states of these wells, which are not observed in time-integrated photoluminescence spectra. It is shown that, due to a high pump level, the electron gas is initially strongly heated, which makes it possible to observe band-to-band transitions between both the ground and excited states. Nonequilibrium carriers cool down with a characteristic relaxation time of ∼125 ps.

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Correspondence to K. V. Maremyanin.

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Original Russian Text © K.V. Maremyanin, D.I. Kryzhkov, S.V. Morozov, S.M. Sergeev, D.I. Kuritsyn, D.M. Gaponova, V.Ya. Aleshkin, Yu.G. Sadof’ev, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 11, pp. 1499–1502.

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Maremyanin, K.V., Kryzhkov, D.I., Morozov, S.V. et al. Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range. Semiconductors 48, 1463–1466 (2014). https://doi.org/10.1134/S1063782614110165

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  • DOI: https://doi.org/10.1134/S1063782614110165

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