Abstract
n-TiO2:Cr2O3/p-Si anisotype heterostructures are fabricated by the deposition of a TiO2: Cr2O3 film by electron-beam evaporation onto a polished polycrystalline silicon substrate. Their electrical properties are studied and the dominant charge-transport mechanisms are determined: multistage tunneling-recombination mechanism involving surface states at the TiO2: Cr2O3/Si metallurgical interface under small forward biases and tunneling at biases exceeding 0.8 V. The reverse currents through the heterostructures under study are analyzed in terms of the single-stage tunneling mechanism of charge transport.
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Original Russian Text © A.I. Mostovoi, V.V. Brus, P.D. Maryanchuk, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1205–1208.
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Mostovoi, A.I., Brus, V.V. & Maryanchuk, P.D. Charge-transport mechanisms in heterostructures based on TiO2:Cr2O3 thin films. Semiconductors 48, 1174–1177 (2014). https://doi.org/10.1134/S1063782614090164
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DOI: https://doi.org/10.1134/S1063782614090164