Abstract
The special postgrowth processing of structures for quantum-cascade lasers is studied. The processing includes regrowth with a high-resistivity material (indium phosphide) with a carrier concentration of n ≈ 5 × 1010 cm−3, photolithography with various wet chemical etchants, and the fabrication of special contacts providing enhanced heat removal. The use of modified postgrowth processing provides necessary parameters satisfying requirements for high-quality devices.
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Original Russian Text © V.V. Mamutin, N.D. Ilyinskaya, D.A. Bedarev, R.V. Levin, B.V. Pushnyi, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 8, pp. 1132–1137.
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Mamutin, V.V., Ilyinskaya, N.D., Bedarev, D.A. et al. Study of postgrowth processing in the fabrication of quantum-cascade lasers. Semiconductors 48, 1103–1108 (2014). https://doi.org/10.1134/S1063782614080181
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DOI: https://doi.org/10.1134/S1063782614080181