Abstract
Methods for minimizing nonlinear matrix effects in the quantitative determination of germanium concentrations in Ge x Si1 − x layers by secondary ion mass spectrometry are discussed. The analysis conditions with positive SiCs+, GeCs+ and negative Ge−, Si− secondary ions produced during sputtering by cesium ions are used in the TOF.SIMS-5 setup with a time-of-flight mass analyzer. In contrast to published works for TOF.SIMS setups, the linear dependence of the ion-concentration ratio Ge−/Si− on x/(1 − x) is shown. Two new linear calibrations for the germanium concentration as a function of the cluster Ge −2 secondary ion yield are proposed. The calibration factors are determined for all linear calibrations at various energies of sputtered cesium ions and Bi+ and probe Bi +3 ions. It is shown for the first time that the best depth resolution among the possible conditions of quantitative germanium depth profiling in Ge x Si1 − x /Si multilayer heterostructures is provided by the calibration mode using elemental Ge− and Si− negative secondary ions.
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Original Russian Text © M.N. Drozdov, Yu.N. Drozdov, A.V. Novikov, P.A. Yunin, D.V. Yurasov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 8, pp. 1138–1146.
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Drozdov, M.N., Drozdov, Y.N., Novikov, A.V. et al. Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures. Semiconductors 48, 1109–1117 (2014). https://doi.org/10.1134/S1063782614080090
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DOI: https://doi.org/10.1134/S1063782614080090