Abstract
Comparative investigations of homoepitaxial diamond films with natural and modified isotopic compositions, grown by chemical vapor deposition (CVD) on type-Ib diamond substrates, are carried out using double-crystal X-ray diffractometry and topography. The lattice mismatch between the substrate and film is precisely measured. A decrease in the lattice constant on the order of (Δa/a)relax ∼ (1.1–1.2) × 10–4 is recorded in isotopically modified 13С (99.96%) films. The critical thicknesses of pseudomorphic diamond films is calculated. A significant increase in the dislocation density due to the elastic stress relaxation is revealed by X-ray topography.
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Original Russian Text © I.A. Prokhorov, A.E. Voloshin, V.G. Ralchenko, A.P. Bolshakov, D.A. Romanov, A.A. Khomich, E.A. Sozontov, 2016, published in Kristallografiya, 2016, Vol. 61, No. 6, pp. 945–952.
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Prokhorov, I.A., Voloshin, A.E., Ralchenko, V.G. et al. X-ray diffraction characterization of epitaxial CVD diamond films with natural and isotopically modified compositions. Crystallogr. Rep. 61, 979–986 (2016). https://doi.org/10.1134/S1063774516060122
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DOI: https://doi.org/10.1134/S1063774516060122