Abstract
The processes of plasma etching of stack layers to form a structure of a metal gate of a nanoscale transistor with a dielectric with a high level of dielectric permittivity (HkMG) are investigated. A resist mask formed by fine-resolution electron-beam lithography is used in the etching. The plasma etching of the stack’s layers is carried out in one technological etching cycle without a vacuum break. The sequential anisotropic etching process of the stack of polysilicon, tantalum nitride, and hafnium nitride, as well as the etching process of the gate insulator based on hafnium oxide with a high degree of selectivity in relation to the underlying crystalline silicon, which guarantees the complete removal of the layer of hafnium oxide and the minimal loss of the silicon layer (not more than 0.5 nm), is investigated.
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Original Russian Text © A.V. Myakonkikh, K.Yu. Kuvaev, A.A. Tatarintsev, N.A. Orlikovskii, K.V. Rudenko, O.P. Guschin, E.S. Gornev, 2018, published in Mikroelektronika, 2018, Vol. 47, No. 5.
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Myakonkikh, A.V., Kuvaev, K.Y., Tatarintsev, A.A. et al. Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension. Russ Microelectron 47, 323–331 (2018). https://doi.org/10.1134/S1063739718050062
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DOI: https://doi.org/10.1134/S1063739718050062