Abstract
The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10−12−10−4 Ω−1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.
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Original Russian Text © N.P. Stepina, A.V. Nenashev, A.V. Dvurechenskii, 2017, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2017, Vol. 106, No. 5, pp. 288–292.
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Stepina, N.P., Nenashev, A.V. & Dvurechenskii, A.V. Hall effect in hopping conduction in an ensemble of quantum dots. Jetp Lett. 106, 308–312 (2017). https://doi.org/10.1134/S0021364017170118
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DOI: https://doi.org/10.1134/S0021364017170118