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Radiation Defects in Aluminum Nitride under Irradiation with Low-Energy C2+ Ions

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Abstract

The radiation resistance of ceramic materials based on aluminum nitride have been studied. The irradiation has been performed at a temperature of 300 K using 40-keV C2+ ions with a fluence varied from 1014 to 1015 ion/cm2. The dependences of crystallographic characteristics and strength properties on the ion fluence have been determined on the basis of X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis data. It has been found that the irradiation results in the formation of an impurity phase Al4C3 in the surface layer, which leads to an increase in the lattice parameters. This finding indicates the implantation of C2+ ions and the formation of the interstitial phase in the structure.

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Authors and Affiliations

  1. Institute of Nuclear Physics, Ministry of Energy of the Republic of Kazakhstan, Almaty, Kazakhstan

    A. L. Kozlovskii & M. V. Zdorovets

  2. Gumilyov Eurasian National University, Astana, Kazakhstan

    A. L. Kozlovskii, T. Yu. Gladkikh & M. V. Zdorovets

  3. Ural Federal University, Yekaterinburg, Russia

    M. V. Zdorovets

Authors
  1. A. L. Kozlovskii
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  2. T. Yu. Gladkikh
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  3. M. V. Zdorovets
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Correspondence to A. L. Kozlovskii.

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Translated by V. Avdeeva

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Kozlovskii, A.L., Gladkikh, T.Y. & Zdorovets, M.V. Radiation Defects in Aluminum Nitride under Irradiation with Low-Energy C2+ Ions. High Energy Chem 53, 143–146 (2019). https://doi.org/10.1134/S0018143919020097

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  • DOI: https://doi.org/10.1134/S0018143919020097

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