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Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy

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Abstract

The combination of Si and 4H–SiC has potential applications in heterojunction diodes, bipolar-junction transistors, and optoelectronic devices. However, growing crystalline Si on 4H–SiC is challenging owing to a lattice mismatch of approximately 20% between Si and 4H–SiC. In this study, we discuss the growth of a Si epilayer by an Al-based nanostructure cluster grown on a 4H–SiC substrate using mixed-source hydride vapor phase epitaxy (HVPE). The results of the Raman spectra of the Al-based nanostructure cluster and hexagonal-shape Si and high-resolution X-ray diffraction patterns of the Si epilayer show that the hexagonal-shape Si epilayer exhibit a hexagonal 2H–Si structure belonging to the P63/mmc (D46h) space group. The mixed-source HVPE method enables the growth of crystalline Si on a 4H–SiC substrate despite the significant lattice mismatch between the 4H–SiC substrate and Si structures. Therefore, the potential application of the novel Si/SiC structure can be achieved using a mixed-source HVPE growth method.

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Acknowledgements

This work was supported by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) (P0012451, The Competency Development Program for Industry Specialist). In addition, this research was partially supported by the Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea government (MOTIE) (RS-2022-00154720, Technology Innovation Program Development of next-generation power semiconductor based on Si-on-SiC structure).

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Authors and Affiliations

  1. Department of Nano-Semiconductor Engineering, Korea Maritime and Ocean University, Busan, 49112, Republic of Korea

    Seonwoo Park, Suhyun Mun, Kyoung Hwa Kim, Min Yang, Young Tea Chun, Sam Nyung Yi, Hyung Soo Ahn & Jae Hak Lee

  2. LNBS Co., Ltd., Busan, 48731, Republic of Korea

    Jae Hak Lee

  3. Department of Advanced Materials Engineering, Dong-Eui University, Busan, 47340, Republic of Korea

    Yeon-Suk Jang & Won Jae Lee

  4. Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea

    Myeong-Cheol Shin & Sang-Mo Koo

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  1. Seonwoo Park
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Park, S., Mun, S., Kim, K.H. et al. Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy. J. Korean Phys. Soc. 84, 198–207 (2024). https://doi.org/10.1007/s40042-023-00957-w

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