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Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

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Abstract

The Raman and photocurrent of the GaAsN/GaAs multiple quantum wells (MQWs) was studied. The Raman spectra are observed to be dominated by the GaAs longitudinal optical (LO) phonon mode as the strongest peaks show up around 287–292 cm-1. Moreover, the weak and broad spectral features in the range of 265–270 cm-1 originate from the peaks associated with the GaAs transverse optical (TO) phonon mode. And, the peaks observed in the photoluminescence and the photocurrent spectra were preliminarily assigned to electron–heavy hole (e1–hh) and electron–light hole (e1–lh) fundamental transitions. Two additional transitions related to MQWs region are observed other than transitions involving the ground state. The structural properties of GaAsN/GaAs MQWs were investigated by using high-resolution X-ray diffraction (HRXRD).

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Authors and Affiliations

  1. Department of Physics, Semiconductor Physics Research Center, Institute of Photonics Electronics and Information, School of Semiconductor and Chemical Engineering, Jeonbuk National University, 54896, Jeonju, Korea

    Hyeoncheol Kim, Kyu-Hwan Shim, Tae Soo Jeong, Sukill Kang & Taek Sung Kim

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  1. Hyeoncheol Kim
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  2. Kyu-Hwan Shim
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  3. Tae Soo Jeong
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Correspondence to Taek Sung Kim.

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Kim, H., Shim, KH., Jeong, T.S. et al. Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells. Electron. Mater. Lett. 18, 153–158 (2022). https://doi.org/10.1007/s13391-021-00326-4

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  • DOI: https://doi.org/10.1007/s13391-021-00326-4

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