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High-conductivity SiO2-matrix B-doped Si-NC thin films by following ion-beam treatment

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Abstract

In this work, further ion-beam was performed on SiO2-matrix B-doped Si-NC (SBC) thin films in order to enhance conductivity. The effect of ionbeam type on the electrical properties of SBC thin films was investigated systematically. The results indicated that the conductivities of SBC thin films were significantly improved by both argon and hydrogen ion-beam treatments, and the higher the hydrogen ion ratio, the higher the conductivity of SBC thin films. The conductivity of SBC thin films was increased from 1.82 × 10−6 S/cm to 3.2 × 10−3 S/cm with following hydrogen-ion-beam treatment. The change in conductivity of SBC thin films was most possibly resultant from the ion-beam treatment facilitating the formation of higher superficial order and lower defects. An alternative method was proposed to prepare high-conductivity SBC thin films, which may be applied to other heterogeneous thin films.

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Authors and Affiliations

  1. Department of Chemical and Materials Engineering, Hefei University, Hefei City, 230601, China

    Junjun Huang, Jie Yang, Yongzhen Tan, Wei Chen, Tianyu Ge, Yajun Zhang & Min Gao

  2. College of Chemistry and Bioengineering, Hezhou University, Hezhou Ctiy, 542899, China

    Zhenming Chen

  3. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China

    Weiyan Wang

  4. Key Laboratory of Materials for Energy Conversion, Chinese Academy of Sciences, Hefei City, 230601, China

    Junjun Huang

Authors
  1. Junjun Huang
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  2. Weiyan Wang
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  3. Jie Yang
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  4. Yongzhen Tan
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  5. Wei Chen
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  7. Yajun Zhang
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  8. Min Gao
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  9. Zhenming Chen
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Correspondence to Zhenming Chen.

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Huang, J., Wang, W., Yang, J. et al. High-conductivity SiO2-matrix B-doped Si-NC thin films by following ion-beam treatment. Electron. Mater. Lett. 12, 738–741 (2016). https://doi.org/10.1007/s13391-016-6135-9

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  • DOI: https://doi.org/10.1007/s13391-016-6135-9

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