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Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure

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Abstract

The electrical, structural and surface morphological properties of Yb/p-InP Schottky barrier diode (SBD) have been investigated at different annealing temperatures. The determined Schottky barrier height (SBH) and ideality factor n of the as-deposited Yb/p-InP SBD are 0.68 eV (I-V)/0.81 eV((C-V)) and 1.44 respectively. After annealing at 300℃, the SBH of Yb/p-InP SBD increases to 0.72 eV (I-V)/0.88 eV ((C-V)). When the contact is annealed at 400℃, the SBH slightly decreases to 0.67 eV (I-V)/0.80 eV ((C-V)). These results reveal that the optimum annealing temperature for Yb/p-InP SBD is 300℃. Cheung’s functions are also employed to determine the series resistance of the Yb/p-InP SBD. Using Terman’s method, the interface state density is estimated for Yb/p-InP SBD at different annealing temperatures. The XPS results reveal that the existence of phosphorous-rich surface after the annealing. The AES and XRD results showed that the formation of phosphide phases at the Yb/p-InP interface may be the reason for the increase of SBH after annealing at 300℃. The decrease in the BH after annealing at 400℃ may be due to the formation of indium phases at the interface. The overall surface morphology of the Yb Schottky contact is fairly smooth at elevated temperatures.

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Authors and Affiliations

  1. Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India

    V. Rajagopal Reddy & D. Sri Silpa

  2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju, 561-756, Korea

    V. Rajagopal Reddy, V. Janardhanam, Hyung-Joong Yun & Chel-Jong Choi

  3. Division of Material Science, Korea Basic Science Institute, Daejeon, 305-806, Korea

    Hyung-Joong Yun

Authors
  1. V. Rajagopal Reddy
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  2. D. Sri Silpa
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  3. V. Janardhanam
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  4. Hyung-Joong Yun
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  5. Chel-Jong Choi
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Correspondence to V. Rajagopal Reddy or Chel-Jong Choi.

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Rajagopal Reddy, V., Sri Silpa, D., Janardhanam, V. et al. Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure. Electron. Mater. Lett. 11, 73–81 (2015). https://doi.org/10.1007/s13391-014-1368-y

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  • DOI: https://doi.org/10.1007/s13391-014-1368-y

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