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2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

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Abstract

In this paper, the subthreshold behavior of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and subthreshold swing. The surface potential based formulation of subthreshold current and subthreshold swing is done by solving the 2-D Poisson’s equations in the channel region using parabolic approximation method. The dependence of subthreshold characteristics on various device parameters such as gate length ratio, Ge mole fraction, peak doping concentration, projected range, straggle parameter etc. has been studied. The modeling results are found to be well matched with the simulation data obtained by a 2-D device simulator, ATLAS™, from SILVACO.

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Authors and Affiliations

  1. Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, 221005, India

    Ekta Goel, Kunal Singh, Balraj Singh, Sanjay Kumar & Satyabrata Jit

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  1. Ekta Goel
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  2. Kunal Singh
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  3. Balraj Singh
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  4. Sanjay Kumar
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  5. Satyabrata Jit
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Correspondence to Satyabrata Jit.

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Goel, E., Singh, K., Singh, B. et al. 2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs. Indian J Phys 91, 1069–1076 (2017). https://doi.org/10.1007/s12648-017-1019-x

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