Skip to main content
SpringerLink
Log in

Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

  • Original Paper
  • Published:
Indian Journal of Physics Aims and scope Submit manuscript

Abstract

Two dimensional threshold voltage model of ion-implanted strained-Si double-material double-gate MOSFETs has been done based on the solution of two dimensional Poisson’s equation in the channel region using the parabolic approximation method. Novelty of the proposed device structure lies in the amalgamation of the advantages of both the strained-Si channel and double-material double-gate structure with a vertical Gaussian-like doping profile. The effects of different device parameters (such as device channel length, gate length ratios, germanium mole fraction) and doping parameters (such as projected range, straggle parameter) on threshold voltage of the proposed structure have been investigated. It is observed that the subthreshold performance of the device can be improved by simply controlling the doping parameters while maintaining other device parameters constant. The modeling results show a good agreement with the numerical simulation data obtained by using ATLAS™, a 2D device simulator from SILVACO.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. J Welser, J L Hoyt and J F Gibbons IEEE Electron Device Lett. 15 100 (1994)

    Article  ADS  Google Scholar 

  2. M Jurczak, T Skotnicki, G Ricci, Y Campidelli, C Hernandez and D Bensahel 29th European Solid-State Device Research Conference 304 (1999)

  3. K Rim, S Koester, M Hargrove, J Chu, P M Mooney, J Ott, T Kanarsky, P Ronsheim, M Ieong, A Grill and H-S P Wong VLSI Symp. Tech. Dig. 59 (2001)

  4. M Ieong, B Doris, J Kedzierski, K Rim and M Yang Science 306 2057 (2004)

    Article  ADS  Google Scholar 

  5. R Kuchipudi and H Mahmoodi Electron. Des. 6 (2007)

  6. V Venkataraman, S Nawal and M J Kumar IEEE Trans. Electron Devices 54 554 (2007)

    Article  ADS  Google Scholar 

  7. J Kumar, V Venkataraman and S Nawal J. Comput. Electron. 6 439 (2007)

    Article  Google Scholar 

  8. K Kalna, A Martinez, A Svizhenko, M P Anantram, J R Barker and A Asenov J. Comput. Electron. 7 288 (2008)

    Article  Google Scholar 

  9. T Krishnamohan, C Jungemann, D Kim, E Ungersboeck, S Selberherr, P Wong, Y Nishi and K Saraswat Int. Electron Devices Meet. 1 (2006)

  10. T Krishnamohan, D Kim, T V Dinh, A T Pham, B Meinerzhagen, C Jungemann and K Saraswat Int. Electron Devices Meet. 1 (2008)

  11. H Fitriawan, M Ogawa, S Souma and T Miyoshi Phys. stat. sol. (c) 5 74 (2008)

    Article  Google Scholar 

  12. L Hong-Xia, L Jin, L Bin, L Cao and Y Bo Chin. Phys. B 20 017301 (2011)

    Google Scholar 

  13. L Jin, L Hongxia, Y Bo, C Lei and L Bin J. Semicond. 32, 44005 (2011)

    Article  Google Scholar 

  14. M Kumar, S Dubey, P K Tiwari and S Jit J. Comput. Electron. 12 20 (2013)

    Article  Google Scholar 

  15. W Long, H Ou, J-M Kuo and K K Chin IEEE Trans. Electron Devices 46 865 (1999)

    Article  ADS  Google Scholar 

  16. P K Tiwari, S Dubey, M Singh and S Jit J. Appl. Phys. 108 074508 (2010)

    Article  ADS  Google Scholar 

  17. S S Mahato et al. 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2008)

  18. N Sharan and A K Rana Int. J. VLSI Des. Commun. Syst. 2 61 (2011)

    Article  Google Scholar 

  19. M Saxena, S Haldar, M Gupta and R S Gupta Solid-State Electron. 48 1169 (2004)

    Article  ADS  Google Scholar 

  20. M J Kumar and A Chaudhry IEEE Trans. Electron Devices 51 569 (2004)

    Article  ADS  Google Scholar 

  21. X Zhou and W Long IEEE Trans. Electron Devices. 45 2546 (1998)

    Article  ADS  Google Scholar 

  22. M J Kumar, V Venkataraman and S Nawal IEEE Trans. Electron Devices. 53 2500 (2006)

    Article  ADS  Google Scholar 

  23. L Jin, L Hongxia, L Bin, C Lei and B Yuan J. Semicond. 31 084008 (2010)

    Article  ADS  Google Scholar 

  24. J Welser, J L Hoyt and J F Gibbons Int. Electron Devices Meet. 1000 (1992)

  25. L L Minjoo, E A Fitzgerald, M T Bulsara, M T Currie and A Lochtefeld J. Appl. Phys. 97 011101 (2005)

    Article  ADS  Google Scholar 

  26. G Zhang, Z Shao and K Zhou IEEE Trans. Electron Devices 55 803 (2008)

    Article  ADS  Google Scholar 

  27. P K Tiwari and S Jit Journal of Electron Devices 7 241 (2010)

    Google Scholar 

  28. G Rawat, E Goel, S Kumar, M Kumar, S Dubey and S Jit J. Nanoelectron. Optoelectron. 9 442 (2014)

    Article  Google Scholar 

  29. K K Young IEEE Trans. Electron Devices 36 399 (1989)

    Article  ADS  Google Scholar 

  30. A Dasgupta and S K Lahiri IEEE Trans. Electron Devices 35 390 (1988)

    Article  ADS  Google Scholar 

  31. S Dubey, P K Tiwari, and S Jit J. Appl. Phys. 108 034518 (2010)

    Article  ADS  Google Scholar 

  32. H A E Hamid, J R Guitart and B Iñíguez IEEE Trans. Electron Devices 54 1402 (2007)

    Article  ADS  Google Scholar 

  33. ATLAS, ATLAS User Manual: Silvaco International, Santa Clara, CA (2015)

  34. K Rim et al. IEEE Int. Electron Devices Meeting 49 (2003)

  35. T A Langdo et al. Solid-State Electron. 48 1357 (2004)

  36. T A Langdo et al. Appl. Phys. Lett. 82 4256 (2003)

  37. T S Drake et al. J. Electron. Mater. 32 972 (2003)

  38. S Bhushan et al. J. Electron. Devices 15 1285 (2012)

Download references

Author information

Authors and Affiliations

  1. Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, 221005, India

    Ekta Goel, Balraj Singh, Sanjay Kumar, Kunal Singh & Satyabrata Jit

Authors
  1. Ekta Goel
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Balraj Singh
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Sanjay Kumar
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Kunal Singh
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Satyabrata Jit
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Satyabrata Jit.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Goel, E., Singh, B., Kumar, S. et al. Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs. Indian J Phys 91, 383–390 (2017). https://doi.org/10.1007/s12648-016-0918-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12648-016-0918-6

Keywords

PACS Nos.

Search

Navigation