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Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

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Abstract

Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidification of silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidification furnaces are studied. The simulation results show that the distributions of oxygen and carbon impurities change significantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.

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Acknowledgements

The project was supported by the Key Research and Development Program of Jiangsu Province of China (grant no. BE2019009-003), Industry–University Research Project (Wuxi Suntech Solar Power Co., Ltd., grant no. 8421130025), and the National Natural Science Foundation for Young Scholars of China (grant no. 51206069).

Funding

The Project is supported by Key Research and Development Program of Jiangsu Province of China (Grant No. BE2019009-003), Industry-University-Research Project (Wuxi Suntech Solar Power Co., Ltd. Grant No. 8421130025). The National Natural Science Foundation for Young Scholars of China (Grant No. 51206069).

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Authors and Affiliations

  1. School of Energy and Power Engineering, Jiangsu University, Zhenjiang, China

    Wenjia Su, Zhen Zhang, Zhicheng Guan & Jiaqi Li

  2. The Institute of Technological Sciences, Wuhan University, Wuhan, China

    Jiulong Li

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  1. Wenjia Su
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Contributions

Wenjia Su contributed to the conception of the study. Zhen Zhang and Jiulong Li performed the simulation and contributed significantly to analysis and manuscript written. Zhicheng Guan performed the data analyses and modified the manuscript. Jiaqi Li helped perform the analysis with constructive discussion.

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Correspondence to Wenjia Su.

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Su, W., Zhang, Z., Li, J. et al. Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon. Silicon 15, 4127–4135 (2023). https://doi.org/10.1007/s12633-023-02323-8

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  • DOI: https://doi.org/10.1007/s12633-023-02323-8

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