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Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process

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Abstract

2D global transient numerical model based on a new large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally verified. A new pyramid-shaped bottom grille structure is designed. The temperature field, flow field, crystal growth rate, crystal-melt (c-m) interface and thermal stress during the crystal growth process for the furnace with and without pyramid grille are compared and studied. Simulation results indicate that the supercooling of silicon ingot center and excessive crystal growth rate are easily caused when original grille is used, which will lead to the over-convexity of c-m interface and higher thermal stress. The addition of pyramid grille reduces crystal growth rate in the early stage. By reducing heat flux at heat exchange block center, the pyramid grille improves the supercooling of the center area and the shape of c-m interface significantly. Furthermore, the thermal stress at the bottom center and bottom corner of the silicon ingot is reduced by 20.22 and 16.14 % in the modified furnace, respectively.

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Data Availability

All data generated or analyzed during this study are included in this published article.

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Acknowledgements

The Project is supported by Key Research and Development Program of Jiangsu Province of China (Grant No. BE2019009-003), Industry-University-Research Project (Wuxi Suntech Solar Power Co., Ltd. Grant No. 8421130025). The National Natural Science Foundation for Young Scholars of China (Grant No. 51206069).

Funding

The Project is supported by Key Research and Development Program of Jiangsu Province of China (Grant No. BE2019009-003), Industry-University-Research Project (Wuxi Suntech Solar Power Co., Ltd. Grant No. 8,421,130,025). The National Natural Science Foundation for Young Scholars of China (Grant No. 51,206,069).

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Authors and Affiliations

  1. School of Energy and Power Engineering, Jiangsu University, Zhenjiang, China

    Wenjia Su, Jiulong Li, Wei Yang, Xiaomin Han, Zhicheng Guan & Zhen Zhang

Authors
  1. Wenjia Su
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  2. Jiulong Li
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  3. Wei Yang
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  4. Xiaomin Han
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  5. Zhicheng Guan
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  6. Zhen Zhang
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Contributions

Wenjia Su contributed to the conception of the study and the analysis with constructive discussion.

Jiulong Li performed the simulation and contributed to analysis and manuscript written.

Wei Yang and Xiaomin Han performed the data analyses and modified the manuscript.

Zhicheng Guan and Zhen Zhang contributed to carrying out additional analyses and finalizing this paper.

Corresponding author

Correspondence to Wenjia Su.

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Su, W., Li, J., Yang, W. et al. Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process. Silicon 14, 211–221 (2022). https://doi.org/10.1007/s12633-021-01159-4

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