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Tuning the Spectroscopic and Electronic Characteristics of ZnS/SiC Nanostructures Doped Organic Material for Optical and Nanoelectronics Fields

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Abstract

The current work aims to investigate of designing the polystyrene(PS)/zinc sulfide(ZnS)/silicon carbide(SiC) new nanostructures as a potential materials for optical and nanoelectronics applications with potential characteristics include few cost and low weight with excellent spectroscopic and electronic properties compared of other nanostructures. The structure, spectroscopic and electronic characters of PS/ZnS/SiC nanostructures were explored. The optical and electronic characteristics included the total energy, ionization potential, HOMO/LUMO energies, electron affinity, chemical hardness, electronegativity, chemical softness, electrophilicity, dipole moment, electrostatic surfaces potential(ESP), Raman and IR-Spectrums, and density of states. The results indicated that the PS/ZnS/SiC nanostructures have wide absorption spectrum and good spectroscopic characteristics with band gap(1.327 eV) which make it appropriate for a variety of nanooptics and nanoelectronics fields. The absorption of PS shifted to the higher wavelength by adding the ZnS/SiC nanostructures which can be functional in various optical fields.

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Acknowledgements

acknowledgment to University of Babylon.

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  1. Department of Physics, University of Babylon, College of Education for Pure Sciences, Hillah, Iraq

    Hind Ahmed & Ahmed Hashim

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  1. Hind Ahmed
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  2. Ahmed Hashim
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Hind Ahmed and Ahmed Hashim wrote the main manuscript text, prepared figures and reviewed the manuscript.

Hind Ahmed: Gaussian program

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Correspondence to Ahmed Hashim.

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Ahmed, H., Hashim, A. Tuning the Spectroscopic and Electronic Characteristics of ZnS/SiC Nanostructures Doped Organic Material for Optical and Nanoelectronics Fields. Silicon 15, 2339–2348 (2023). https://doi.org/10.1007/s12633-022-02173-w

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