Abstract
Energy conservation and delay minimization are the two major goals while designing ultra-low-power digital integrated circuits at lower technology nodes. Here, silicon based carbon nanotube field effect transistor (CNTFET) has been explored as a novel material for future electronics design applications (EDA). In this paper, two energy-efficient switching activity minimization techniques have been applied with proposed designs. First technique detects the completion of sensing stage operation known as transition completion detection (TCD) technique. TC signal generated from NAND operation of complementary outputs of sensing stage which minimizes glitches in the complementary outputs of the latch stage. Another clock gating mechanism applied at the latch stage to smoothen the output waveforms Q and \(\overline {Q}\). The proposed and existing designs simulated using 32nm CMOS and 32nm CNTFET technology, indicating that the CNTFET based design reduces power by 45% and 36% respectively in comparison with conventional CMOS. Proposed Low Power Sense Amplifier Flip Flop with transition control detection (TCD-LPSAFF) and Ultra Low Energy Sense Amplifier Flip Flop (ULESAFF) give minimal power delay product (PDP) which is 35.7 × 10− 18 J and 29.6 × 10− 18 J respectively. Also, the effect of process variation has been analyzed at specified corners (FF, TT and SS) in the temperature range of -40∘C to 120 ∘C. The performance of all designs has been validated by functionality testing with variation in load cpacitance, diameter, number of tubes and pitch respectively.
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References
Kuhn KJ (2012) IEEE Trans Electron Devices, 59 (7):1813
Haron NZ, Hamdioui S (2008) .. In: 2008 3rd International design and test workshop. IEEE, pp 98–103
Sharroush SM (2018) Ain Shams Engineering Journal, 9(4):1001
Chen A, Datta S, Hu XS, Niemier MT, Rosing TŠ, Yang JJ (2019) IEEE Design & Test 36(3):46
Marani R, Perri AG (2015) arXiv:1511.01356
Peng LM, Zhang Z, Wang S (2014) Materials Today, 17,(9):433
Tulevski GS, Franklin AD, Frank D, Lobez JM, Cao Q, Park H, Afzali A, Han SJ, Hannon JB, Haensch W (2014) ACS nano, 8,(9):8730
Raychowdhury A, Roy K (2007) IEEE Transactions on Circuits and Systems I: Regular Papers, 54, 11:2391
Sayed SI, Abutaleb MM, Nossair ZB (2016) Advances in Materials Science and Engineering 2016
Sankar PG, Udhayakumar K (2014) J Semicond, 35,(7):075001
Darwish T, Bayoumi M (2002) The 14th international conference on microelectronics, IEEE:96–99
Karimi A, Rezai A, Hajhashemkhani MM (2019) IEEE Trans Nanotechnol, 18:756
Sahai A, Sharma V (2015) International Journal of Engineering Research & Technology (IJERT),4(4):541
CARBON N (2013) Am J Appl Sci 10(12):1509
Alioto M, Consoli E, Palumbo G (2016) Flip-flop design in nanometer CMOS. Springer, Berlin
Wang W, Gong H (2004) IEEE Trans Nucl Sci, 51,(6):3811
Jeong H, Oh TW, Song SC, Jung SO (2018) IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 26(4):609
You H, Yuan J, Tang W, Yu Z, Qiao S (2020) Electronics 9(5):802
Lin JF, Hong ZJ, Tsai CM, Wu BC, Yu SW (2020) nopunct, vol 9
Tschanz J, Narendra S, Chen Z, Borkar S, Sachdev M, De V (2001) .. In: Proceedings of the 2001 international symposium on Low power electronics and design, pp 147–152
Nikolic B, Oklobdzija VG, Stojanovic V, Jia W, Chiu JKS, Leung MMT (2000) nopunct, vol 35
Lin JF, Hwang YT, Wong CS, Sheu MH (2015) Electron Lett 51(1):20
Kim JC, Jang YC, Park HJ (2000) Electron Lett, 36(6):498
Strollo AG, De Caro D, Napoli E, Petra N (2005) IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 13, (11), 1266
Montanaro J, Witek RT, Anne K, Black AJ, Cooper EM, Dobberpuhl DW, Donahue PM, Eno J, Hoeppner W, Kruckemyer D, et al. (1996) IEEE J Solid State Circuits 31, 11:1703
Lang YF, Shen JZ, Geng L, Yao MQ (2014) Electron Lett, 50(15):1052
Ravi T, Kannan V (2012) Applied Mechanics and Materials, 229, Trans Tech Publ:1651–1655
Stanford University CNTFET model. Availableat https://nano.stanford.edu/stanford-cnfet2-model,version1.6.0
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authors would like to thank head of the department, Department of Electronics and Communication Engineering, Malaviya National Institute of Technology for providing necessary platform and required software for the simulation work.
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The basic motivation to design two novel low power Sense Amplifier Flip Flops is of K. Swami(Author 1). Ritu Sharma supervised the simulation work and conceptual discussions to develop and modify the manuscript.
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Swami, K., Sharma, R. Implementation and Optimization of CNTFET Based Ultra-Low Energy Delay Flip Flop Designs. Silicon 15, 1027–1035 (2023). https://doi.org/10.1007/s12633-021-01085-5
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DOI: https://doi.org/10.1007/s12633-021-01085-5