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Performance Analysis of an HJ-IBC Silicon Solar Cell in Ultra-High Temperatures: Possibility of Lower Reduction Efficiency Rate

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Abstract

The paper investigates the influence of various geometrical parameters (thickness of intrinsic a-Si, gap distance, n-type and p-type stripes) and the temperature on the performance of heterojunction interdigitated back contact (HJ-IBC) solar cell. There exists a strong correlation between the gap distance and the width of the n-type or p-type of the amorphous silicon (a-Si) layer as well as the thickness of the a-Si layer and the performance of the HJ-IBC silicon solar cells. It is shown that the defined reduction efficiency rate of an HJ-IBC silicon solar cell is lower than the reduction efficiency rate of conventional silicon solar, suggesting a better performance in the outdoor condition of the HJ-IBC solar cells. It is also argued that a temperature-dependent free HJ-IBC solar cell can be realized by tuning the intrinsic layer thickness. Furthermore, the comparison between top/rear contact HJ and HJ-IBC solar cell shows that HJ-IBC has the best performance in outdoor condition.

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Acknowledgments

The author would like to express their sincere thanks to University of Mohaghegh Ardabili.

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  1. Department of Electrical and Computer Engineering, University of Mohaghegh Ardabili, Ardabil, Iran

    Hamid Heidarzadeh

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  1. Hamid Heidarzadeh
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Correspondence to Hamid Heidarzadeh.

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Heidarzadeh, H. Performance Analysis of an HJ-IBC Silicon Solar Cell in Ultra-High Temperatures: Possibility of Lower Reduction Efficiency Rate. Silicon 12, 1369–1377 (2020). https://doi.org/10.1007/s12633-019-00230-5

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