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Effect of Temperature on Reliability Issues of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET)

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Abstract

This paper addresses reliability issues associated with temperature of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET). The simulated results are compared with Dopant Segregated Schottky Barrier TFET (DS-SBTFET). This is achieved by varying the operating temperature from 300 to 500 K. DC parameters such as ION/IOFF ratio, drain current characteristics and subthreshold swing (SS) for a range of temperature have been highlighted. Moreover, the influence of temperature on various RF figure of merits such as gate capacitance (CGG), intrinsic delay, cutoff frequency (fT) etc. have been investigated. The device linearity has been analyzed by considering the effect of temperature variation on linearity parameters like gm2, gm3, 1-dB compression point, VIP2, VIP3 and IIP3. The device characteristics get upgraded by the increase in cut-off frequency and reduction in intrinsic delay at elevated temperature.

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  1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, 788010, India

    Puja Ghosh & Brinda Bhowmick

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  1. Puja Ghosh
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  2. Brinda Bhowmick
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Correspondence to Puja Ghosh.

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Ghosh, P., Bhowmick, B. Effect of Temperature on Reliability Issues of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET). Silicon 12, 1137–1144 (2020). https://doi.org/10.1007/s12633-019-00206-5

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  • DOI: https://doi.org/10.1007/s12633-019-00206-5

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