Skip to main content
SpringerLink
Log in

Mathematical Evaluation of a-Si:H Film Formation in rf-PECVD Systems

  • Original Paper
  • Published:
Silicon Aims and scope Submit manuscript

Abstract

Radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) is an efficient technique for preparing hydrogenated amorphous silicon (a-Si:H) layers used in thin film silicon solar cells. The most important parameters in a PECVD system are the chamber pressure, substrate temperature, partial gas flow, plasma power, electrode spacing, and deposition time, by which the physical and electrical parameters of the deposited layers, such as phase, quality, thickness, doping concentration, energy gap, defect density, and mobility can be controlled. Moreover, some of the film parameters are indirectly related to the others. As a result, it is always difficult to describe the relations between the deposition parameters and the specifications of the deposited layer in closed-form equations, therefore, prediction of the properties of the deposited films remains an issue. In addition, the helpful facilities for in-situ monitoring of the film under deposition are very limited. In this research, based on a broad experimental data reported in the literature, it has been found that in many cases the performance of a PECVD system can be described in equation or graph forms, and effective estimations may be established for prediction of its performance. A flowchart is also presented to explain the steps required for adjusting the input parameters of the system for the fabrication of a desired layer, which can reduce the complexity of interrelations among the variables, leading to a more accurate and flexible process design.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Tian L (2013) Development of advanced thin films by PECVD for photovoltaic applications. University of Waterloo

  2. Brodsky MH (1985) Amorphous semiconductors. Springer, Berlin

    Book  Google Scholar 

  3. Searle T (1998) Properties of amorphous silicon and its alloys. INSPEC

  4. Ganji J, Kosarian A, Kaabi H (2016) Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures. J Comput Electron 15:1541–1553. ISSN 1572-8137. https://doi.org/10.1007/s10825-016-0913-3

    Article  CAS  Google Scholar 

  5. Schulze TF (2011) Structural, electronic and transport properties of amorphous/crystalline silicon heterojunctions. PhD dissertation, Helmholtz Zentrum Berlin June 2011

  6. Mahan AH, Carapella J, Nelson BP, Crandall RS, Balberg I (1991) Deposition of device quality, low H content amorphous silicon. J Appl Phys 69:6728–6730. ISSN 0021-8979

    Article  CAS  Google Scholar 

  7. Shah A (2010) Thin-film silicon solar cells. EPFL Press. ISBN 1-4200-6674-9

  8. Capezzuto P, Madan A (1995) Plasma deposition of amorphous silicon-based materials. Academic Press, New York. ISBN 0-08-053910-6

    Google Scholar 

  9. Feenstra KF, Schropp REI, Van der Weg WF (1999) Deposition of amorphous silicon films by hot-wire chemical vapor deposition. J Appl Phys 85:6843–6852. ISSN 0021-8979

    Article  CAS  Google Scholar 

  10. Jeon M-S, Kamisako K (2009) Hydrogenated amorphous silicon thin films as passivation layers deposited by microwave remote-PECVD for heterojunction solar cells. Trans Electr Electron Mater 10:75–79. ISSN 1229-7607

    Article  Google Scholar 

  11. Shirafuji J, Nagata S, Kuwagaki M (1985) Effect of hydrogen dilution of silane on optoelectronic properties in glow-discharged hydrogenated silicon films. J Appl Phys 58:3661–3663. ISSN 0021-8979

    Article  CAS  Google Scholar 

  12. Stuckelberger M, Despeisse M, Bugnon G, Schüttauf J-W, Haug F-J, Ballif C (2013) Comparison of amorphous silicon absorber materials: light-induced degradation and solar cell efficiency. J Appl Phys 114:154509. ISSN 0021-8979

    Article  Google Scholar 

  13. Oversluizen G, Lodders WHM (1998) Optimization of plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon. J Appl Phys 83:8002–8009. ISSN 0021-8979

    Article  CAS  Google Scholar 

  14. Van Sark WGJHM (2002) Methods of deposition of hydrogenated amorphous silicon for device applications. Thin Films Nanostruct 30:1–216

    Article  Google Scholar 

  15. Andújar JL, Bertran E, Canillas A, Roch C, Morenza JL (1991) Influence of pressure and radio frequency power on deposition rate and structural properties of hydrogenated amorphous silicon thin films prepared by plasma deposition. J Vac Sci Technol A 9:2216–2221. ISSN 0734-2101

    Article  Google Scholar 

  16. Machlin ES (2006) Materials science in microelectronics: the relationships between thin film processing and structure. Cambridge University Press, Cambridge. ISBN 0-08-044640-X

    Google Scholar 

  17. Bahrami A, Mohammadnejad S, Soleimaninezhad S (2013) Photovoltaic cells technology: principles and recent developments. Opt Quant Electron 45:161–197. ISSN 0306-8919

    Article  Google Scholar 

  18. Winer K (1990) Defect formation in a-Si: H. Phys Rev B 41(1):2150

    Google Scholar 

  19. Compaan AD, Deng X, Bohn RG High efficiency thin film cdte and a-si based solar cells. Technical report, Annual Technical Report, 1999. NREL Contract No. ZAF-8-17619-14

  20. Stutzmann M (1987) Weak bond-dangling bond conversion in amorphous silicon. Philos Mag B 56:63–70. ISSN 1364-2812

    Article  CAS  Google Scholar 

  21. Stutzmann M (1989) The defect density in amorphous silicon. Philos Mag B 60:531–546. ISSN 1364-2812

    Article  CAS  Google Scholar 

  22. Ganguly G, Matsuda A (1993) Defect formation during growth of hydrogenated amorphous silicon. Phys Rev B 47:3661

    Article  CAS  Google Scholar 

  23. Kasap S, Capper P (2007) Springer handbook of electronic and photonic materials. Springer Science & Business Media. ISBN 0-387-29185-7

  24. Knights JC, Lucovsky G, Nemanich RJ (1979) Defects in plasma-deposited a-Si: H. J Non-Cryst Solids 32:393–403. ISSN 0022-3093

    Article  CAS  Google Scholar 

  25. Pankove JI, Carlson DE (1980) Electrical and optical properties of hydrogenated amorphous silicon. Annu Rev Mater Sci 10:43–63. ISSN 0084-6600

    Article  CAS  Google Scholar 

  26. Meytin MN, Zeman M, Budaguan BG, Metselaar JW (2000) Kinetics of light-induced degradation in a-Si: H films investigated by computer simulation. Semiconductors 34:717–722. ISSN 1063-7826

    Article  CAS  Google Scholar 

  27. Street RA, Winer K (1989) Defect equilibria in undoped a-Si: H. Phys Rev B 40:6236

    Article  CAS  Google Scholar 

  28. van den Donker MN, Hamers EAG, Kroesen GMW (2005) Measurements and semi-empirical model describing the onset of powder formation as a function of process parameters in an RF silane–hydrogen discharge. J Phys D Appl Phys 38:2382. ISSN 0022-3727

    Article  Google Scholar 

  29. Bouchoule A, Plain A, Boufendi L, Blondeau J Ph, Laure C (1991) Particle generation and behavior in a silane-argon low-pressure discharge under continuous or pulsed radio-frequency excitation. J Appl Phys 70(4):1991–2000. https://doi.org/10.1063/1.349484

    Article  CAS  Google Scholar 

  30. Lieberman MA, Lichtenberg AJ (2005) Principles of plasma discharges and materials processing. Wiley, New York. ISBN 0-471-72424-6

    Book  Google Scholar 

  31. Abolmasov SN, Kroely L, Roca i Cabarrocas P (2009) Negative corona discharge: application to nanoparticle detection in rf reactors. Plasma Sources Sci Technol 18(1):015005. https://doi.org/10.1088/0963-0252/18/1/015005

    Article  CAS  Google Scholar 

  32. Townsend J (1915) Electricity in gases. Clarendon Press, Oxford

    Book  Google Scholar 

  33. Luque A, Sala G, Palz W, dos Santos G, Helm P (2012) .. In: Tenth EC photovoltaic solar energy conference: proceedings of the international conference, Held at Lisbon, Portugal, 8–12 April 1991. ISBN 94-011-3622-X. Springer

  34. Wronski CR (1992) Review of direct measurements of mobility gaps in a-Si: H using internal photoemission. J Non-Cryst Solids 141:16–23. ISSN 0022-3093

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electronic and Electrical Engineering, Faculty of Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran

    Jabbar Ganji, Abdolnabi Kosarian & Hooman Kaabi

Authors
  1. Jabbar Ganji
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Abdolnabi Kosarian
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Hooman Kaabi
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Abdolnabi Kosarian.

Additional information

Publisher’s Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ganji, J., Kosarian, A. & Kaabi, H. Mathematical Evaluation of a-Si:H Film Formation in rf-PECVD Systems. Silicon 12, 723–734 (2020). https://doi.org/10.1007/s12633-019-00167-9

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12633-019-00167-9

Keywords

Search

Navigation