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Nonlinear interaction of quadruple Gaussian laser beams with narrow band gap semiconductors

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Abstract

This paper presents an investigation on nonlinear propagation of quadruple Gaussian (Q.G) laser beam in narrowband semiconductor (e.g., n-type InSb) plasmas. In the presence of laser beam, the electron fluid in the conduction band becomes relativistic that makes the medium highly nonlinear. As a result the laser beam gets self-focused. Following variational theory approach in W.K.B approximation the numerical solution of the nonlinear Schrodinger wave equation (NSWE) for the field of incident laser beam has been obtained. Particular emphasis is put on dynamical variations of beam spot size and longitudinal phase (Gouy phase). Self-trapping of the laser beam resulting from the dynamical balance between diffraction broadening and nonlinear refraction also has been investigated.

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Authors and Affiliations

  1. Lovely Professional University, Phagwara, India

    Naveen Gupta, Sandeep Kumar, Gnaneshwaran A, Sanjeev Kumar & Suman Choudhry

  2. SUS Govt College, Matak-Majri, Indri, Karnal, India

    S. B. Bhardwaj

  3. Government College for Women, Karnal, India

    Sanjeev Kumar & Suman Choudhry

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  1. Naveen Gupta
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  2. Sandeep Kumar
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  3. Gnaneshwaran A
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  4. S. B. Bhardwaj
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  5. Sanjeev Kumar
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  6. Suman Choudhry
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Correspondence to Naveen Gupta.

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Gupta, N., Kumar, S., A, G. et al. Nonlinear interaction of quadruple Gaussian laser beams with narrow band gap semiconductors. J Opt 51, 269–282 (2022). https://doi.org/10.1007/s12596-021-00776-x

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