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Mechanical aspects of the chemical mechanical polishing process: A review

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Abstract

Chemical mechanical polishing (CMP) is an essential semiconductor manufacturing process because of its local and global planarization ability in fabricating highly integrated devices. The CMP process uses both chemical reaction and mechanical polishing simultaneously. The combination of chemical reaction and mechanical removal in CMP is so complex that understanding the material removal mechanism has been a challenge for researchers and engineers. The chemical reaction mechanism is determined by the chemical composition of the CMP slurry and the material property of the target material. However, the mechanical action is a complex result of various mechanical factors of the process parameters and consumables. The mechanical material removal is a cornerstone of understanding and predicting CMP results. This review focuses on the mechanical aspects in CMP in terms of the process parameters and consumables of the CMP process that directly influence the material removal characteristics.

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Abbreviations

MRR :

material removal rate

K :

Preston’s coefficient

P :

pressure

V :

relative velocity

P avg :

average value of pressure

V avg :

average value of relative velocity

Ω:

spatial parameter

r 0 :

distance between the centers of pad and wafer

ω p :

angular velocity of platen

ω w :

angular velocity of wafer

R :

radial distance of a point on wafer from wafer center

t :

polishing time

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Authors and Affiliations

  1. Department of Mechanical Engineering, Tongmyong University, 428, Sinseon-ro, Nam-gu, Busan, 48520, South Korea

    Hyunseop Lee

  2. School of Mechanical Engineering, Pusan National University, 2, Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea

    Dasol Lee & Haedo Jeong

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  1. Hyunseop Lee
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Lee, H., Lee, D. & Jeong, H. Mechanical aspects of the chemical mechanical polishing process: A review. Int. J. Precis. Eng. Manuf. 17, 525–536 (2016). https://doi.org/10.1007/s12541-016-0066-0

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  • DOI: https://doi.org/10.1007/s12541-016-0066-0

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