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Effect of pad groove geometry on material removal characteristics in chemical mechanical polishing

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Abstract

In this paper, we investigate the effect of groove geometry on chemical mechanical polishing (CMP) characteristics by considering the slurry duration time (SDT) and frictional behavior during CMP. XY-grooved polishing pads with different kinds of groove geometry (groove width and pitch) are considered. The dynamic coefficient of friction (COF) was measured with a piezoelectric sensor. The study revealed that the groove geometry affects the slurry flow in the wafer-pad interface and the motion of slurry abrasives, which influences the friction force, SDT, material removal rate (MRR), and within-wafer nonuniformity (WIWNU). A polishing pad having a wider groove with a small pitch has a shorter SDT and a higher COF, which guarantee better a polishing uniformity and MRR.

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Abbreviations

MRR:

material removal rate

SDT:

slurry duration time

COF:

coefficient of friction

WIWNU:

within-wafer non-uniformity

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Authors and Affiliations

  1. Graduate School of Mechanical Engineering, Pusan National University, 63 Busandaehak-ro, Geumjeong-gu, Busan, Korea, 609-735

    Yongchang Guo, Youngkyun Lee & Haedo Jeong

  2. Department of Mechanical Engineering, University of California, Berkeley, California, 94720-1740, USA

    Hyunseop Lee

Authors
  1. Yongchang Guo
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  2. Hyunseop Lee
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  3. Youngkyun Lee
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  4. Haedo Jeong
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Correspondence to Haedo Jeong.

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Guo, Y., Lee, H., Lee, Y. et al. Effect of pad groove geometry on material removal characteristics in chemical mechanical polishing. Int. J. Precis. Eng. Manuf. 13, 303–306 (2012). https://doi.org/10.1007/s12541-012-0038-y

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  • DOI: https://doi.org/10.1007/s12541-012-0038-y

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