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Persistence of charge density wave against variation of band structures in VxTi1−xSe2(x = 0−0.1)

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Abstract

Charge density wave (CDW) is a phenomenon that occurs in materials, accompanied by changes in their intrinsic electronic properties. The study of CDW and its modulation in materials holds tremendous significance in materials research, as it provides a unique approach to controlling the electronic properties of materials. TiSe2 is a typical layered material with a CDW phase at low temperatures. Through V substitution for Ti in TiSe2, we tuned the carrier concentration in VxTi1−xSe2 to study how its electronic structures evolve. Angle-resolved photoemission spectroscopy (ARPES) shows that the band-folding effect is sustained with the doping level up to 10%, indicating the persistence of the CDW phase, even though the band structure is strikingly different from that of the parent compound TiSe2. Though CDW can induce the band fold effect with a driving force from the perspective of electronic systems, our studies suggest that this behavior could be maintained by lattice distortion of the CDW phase, even if band structures deviate from the electron-driven CDW scenario. Our work provides a constraint for understanding the CDW mechanism in TiSe2, and highlights the role of lattice distortion in the band-folding effect.

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Acknowledgments

We acknowledge the financial support from the National Key R&D Program of China (No. 2017YFA0402901), the National Natural Science Foundation of China (Nos. U2032153, 21727801, and 11621063), the Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDB25000000), the International Partnership Program of Chinese Academy of Sciences (CAS)(No. 211134KYSB20190063), the Collaborative Innovation Program of Hefei Science Center of CAS (No. 2019HSC-CIP007). We thank the Hefei Synchrotron Radiation Facility (ARPES Endstation at the NSRL), and the University of Science and Technology of China (USTC) Center for Micro and Nanoscale Research and Fabrication for help in characterizations.

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Author notes

  1. Zhanfeng Liu and Tongrui Li contributed equally to this work.

Authors and Affiliations

  1. National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, 230029, China

    Zhanfeng Liu, Tongrui Li, Wen Zhu, Mukhtar Lawan Adam, Qilong Cui, Yuliang Li, Sheng Wang, Yunbo Wu, Hongen Zhu, Yi Liu, Shuangming Chen, Shengtao Cui, Li Song & Zhe Sun

  2. CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, China

    Zhe Sun

  3. Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, China

    Zhe Sun

  4. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun, 130012, China

    Li Song

  5. School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, 230026, China

    Hongwei Shou & Xiaojun Wu

  6. School Zhejiang Institute of Photonelectronics, Jinhua, 321004, China

    Li Song

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  1. Zhanfeng Liu
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  2. Tongrui Li
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  3. Wen Zhu
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Correspondence to Shengtao Cui, Li Song or Zhe Sun.

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Liu, Z., Li, T., Zhu, W. et al. Persistence of charge density wave against variation of band structures in VxTi1−xSe2(x = 0−0.1). Nano Res. 17, 2129–2135 (2024). https://doi.org/10.1007/s12274-023-5936-z

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