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Characterization of CuZnO Diodes Prepared by Ultrasonic Spray Method

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Abstract

Zinc oxide (ZnO) nanostructures have attracted considerable research interest owing to their useful properties. Recently, doping with Cu atoms has been increasingly attracting attention because of its potential applications in semiconductor devices. In this study, CZO films were prepared on glass substrates by an ultrasonic spray method using zinc acetate, copper acetate, and aqueous ammonium acetate as precursors. The electrical and optical properties of the prepared CZO films and the ZnO/CZO diodes are discussed. This study comprises two parts. First, CZO films with Cu weight percentages from 10 wt.% to 30 wt.%. The electrical and optical properties of the CZO films were measured and compared. Second, a ZnO/CZO diode was fabricated on an ITO substrate. The I-V curve of the device was obtained with or without exposure to a magnetic field.

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Acknowledgments

The financial support of this paper was provided by the Ministry of Science and Technology of the Republic of China under Contract No. NSC 103-2221-E-027-029-MY2.

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  1. Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei, 106, Taiwan

    Lung-Chien Chen & Cheng-An Hsieh

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Correspondence to Lung-Chien Chen.

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Chen, LC., Hsieh, CA. Characterization of CuZnO Diodes Prepared by Ultrasonic Spray Method. J Therm Spray Tech 24, 1542–1548 (2015). https://doi.org/10.1007/s11666-015-0347-7

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