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Effect of Cu interlayer on opto-electrical parameters of ZnO thin films

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Abstract

In this paper, we focused our attention on the tailoring of structure and optical analysis as a function of Cu interlayer between the ZnO layers. The Cu interlayer was deposited by magnetron sputtering, while the ZnO layers were deposited by atomic layer deposition. Morphological analysis, based on grazing incident X-ray diffraction patterns and scanning electron microscope images, revealed formation of crystalline phase and a successful incorporation of Cu into ZnO. The estimated average crystallite size increased from 8.64 to 12.05 nm as Cu interlayer thickness increased from 20 to 70 nm. The averaged value of the surface roughness was determined, from both the profilometer and the XRD measurements. The determinations of the optical band gap and the nature of optical transition were performed by the analysis of absorption spectrum. Also, some physical quantities, such as optical density OD and skin depth δ, were estimated. Optical absorption studies revealed that all the films have a direct allowed transition. A shift in the optical energy band gap Eg from 2.75 to 2.43 eV as a function of Cu interlayer thickness was observed. The linear refractive index (n) was analyzed to determine the metallization criterion M, the reflection loss function RL, the transmission coefficient T and the relative density Dr. Moreover, we showed that the doping of ZnO with different thickness of Cu interlayer enhances its optical activity and electrical conductivity as well, which makes it useful for photocatalytic application and sensor device fabrication in particular conditions.

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Acknowledgements

The samples used in this study were prepared, and films morphology and uniformity were measured at the University of Debrecen, Hungary, according to the agreement between Faculty of Education, Ain Shams University “Coordinator and Supervisor Prof. Dr. Suzan Fouad” and Faculty of Science and Technology, University of Debrecen “Coordinator and Supervisor Prof. Dr. Zoltán Erdélyi”. The opto-electrical parameters were measured at Laser Physics and Nanotechnology Unit (LPTU), Faculty of Engineering, Shoubra, Benha University. Project no. TKP2021-NKTA-34 has been implemented with the support provided from the National Research, Development and Innovation Fund of Hungary, financed under the TKP2021-NKTA funding scheme.

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Authors and Affiliations

  1. Department of Physics, Faculty of Education, Ain Shams University, Cairo, 11566, Egypt

    S. S. Fouad

  2. Department of Solid-State Physics, Faculty of Sciences and Technology, University of Debrecen, P.O. Box 400, Debrecen, 4002, Hungary

    B. Parditka, E. Baradács & Zoltán Erdélyi

  3. Department of Basic Engineering Sciences, Faculty of Engineering (Shoubra), Benha University, Benha, Egypt

    M. Nabil & S. Negm

  4. Department of Environmental Physics, Faculty of Sciences and Technology, University of Debrecen, Poroszlay u. 6, Debrecen, 4026, Hungary

    E. Baradács

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  1. S. S. Fouad
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Contributions

The submission of the manuscript has been approved by all coauthors. SSF contributed to the idea and the writing and the revision. EB and BP prepared samples. MN measured and calculated the different parameters and revision. SN involved in revision. ZE involved in revision.

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Correspondence to M. Nabil.

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The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Fouad, S.S., Parditka, B., Nabil, M. et al. Effect of Cu interlayer on opto-electrical parameters of ZnO thin films. J Mater Sci: Mater Electron 33, 20594–20603 (2022). https://doi.org/10.1007/s10854-022-08871-w

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