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Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers

  • Topical Collection: 19th Conference on Defects (DRIP XIX)
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Abstract

The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type.

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Authors and Affiliations

  1. Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-Cho, Saiwai-Ku, Kawasaki, 212-8582, Japan

    Johji Nishio, Chiharu Ota & Ryosuke Iijima

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  1. Johji Nishio
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  2. Chiharu Ota
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  3. Ryosuke Iijima
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Nishio, J., Ota, C. & Iijima, R. Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers. J. Electron. Mater. 52, 5084–5092 (2023). https://doi.org/10.1007/s11664-023-10343-8

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