Dislocation “half-loop arrays” (HLAs) in 4H-SiC homo-epilayers are studied by molten KOH etching and atomic force microscopy (AFM). It is found that the dislocation half-loops in an array exist at different depths in the epilayer, and they are aligned roughly but not exactly perpendicular to the off-cut direction. These results indicate that the dislocation half-loops in an array are not formed simultaneously, but the array extends by generation of new half-loops during growth. It is also demonstrated that the HLAs can be artificially induced by creating strain in the material, followed by annealing.
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References
P.G. Neudeck, Mater. Sci. Forum 338–342, 1161 (2000)
S. Ha, H.J. Chung, N.T. Nuhfer, M. Skowronski, J. Cryst. Growth 262, 130 (2004)
S. Ha, M. Skowronski, H. Lendenmann, J. Appl. Phys. 96, 393 (2004)
S. Ha, P. Mieszkowski, M. Skowronski, L.B. Rowland, J. Cryst. Growth 244, 257 (2002)
S. Ha, W.M. Vetter, M. Dudley, M. Skowronski, Mater. Sci. Forum 389–393, 443 (2002)
Z. Zhang, Y. Gao, T.S. Sudarshan, Electrochem. Solid-State Lett. 7, G264 (2004)
V. Tillay, F. Pailloux, M.F. Denanot, P. Pirouz, J. Rabier, J.L. Demenet, J.F. Barbot, Eur. J. Appl. Phys. 2, 111 (1998)
R.S. Okojie, M. Zhang, P. Pirouz, Mater. Sci. Forum 457–460, 529 (2004)
St.G. Müller, R.C. Glass, H.M. Hobgood, V.F. Tsvetkov, M. Brady, D. Henshall, J.R. Jenny, D. Malta, C.H. Carter Jr., J. Cryst. Growth 211, 325 (2000)
V.F. Tsvetkov, D.N. Henshall, M.F. Brady, R.C. Glass, J.C.H. Carter, Mater. Res. Soc. Symp. Proc. 512, 89 (1998)
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Zhang, Z., Stahlbush, R., Pirouz, P. et al. Characteristics of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epilayer. J. Electron. Mater. 36, 539–542 (2007). https://doi.org/10.1007/s11664-007-0129-1
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DOI: https://doi.org/10.1007/s11664-007-0129-1