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Full-Wafer Strain and Relaxation Mapping of Hg1−xCdxTe Multilayer Structures Grown on Cd1−yZnyTe Substrates

  • U.S. Workshop on Physics and Chemistry of II-VI Materials 2018
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Abstract

State-of-the-art Hg1−xCdxTe multilayer structures grown by molecular beam epitaxy on (211)-oriented Cd1−yZnyTe substrates have been characterized and their strain and relaxation analyzed. Techniques for measuring lattice mismatch, strain, and crystal quality by measuring symmetric and asymmetric diffraction profiles in different azimuths were adapted and performed in combination with dislocation delineation for full-wafer and multilayer characterization. It was found that the degree of lattice mismatch and in turn the strain state of epitaxial multilayers can be made uniform across full wafers in optimized structures. A strong correlation was revealed between the Zn composition of the Cd1−yZnyTe substrates and the crystal quality of the active layers in the multilayer structures. This method can be generalized to optimize multilayer structures to minimize relaxation by the generation of extended defects.

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References

  1. M. Zandian, M. Farris, W. McLevige, D. Edwall, E. Arkun, E. Holland, J.E. Gunn, S. Smee, D.N.B. Hall, K.W. Hodapp, A. Shimono, N. Tamura, M. Carmody, J. Auyeung, and J.W. Beletic, Proceedings of SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99150F (2016)

  2. D. Lee, M. Carmody, E. Piquette, P. Dreiske, A. Chen, A. Yulius, D. Edwall, S. Bhargava, M. Zandian, and W.E. Tennant, J. Electron. Mater. 45, 9 (2016).

    Google Scholar 

  3. S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor, and M.E. Boyd, J. Vac. Sci. Technol., B 10, 1499 (1992).

    Article  Google Scholar 

  4. R.S. List, J. Electron. Mater. 22, 1017 (1993).

    Article  Google Scholar 

  5. A.T. Paxton, A. Sher, M. Berding, M. Van Schilfgaarde, and M.W. Muller, J. Electron. Mater. 24, 52 (1995).

    Article  Google Scholar 

  6. A. Szilagyi and M.N. Grimbergen, J. Vac. Sci. Technol., A 4, 2200 (1986).

    Article  Google Scholar 

  7. M. Yoshikawa, K. Maruyama, T. Saito, T. Maekawa, and H. Takigawa, J. Vac. Sci. Technol., A 5, 3052 (1987).

    Article  Google Scholar 

  8. M.A. Berding, W.D. Nix, D.R. Rhiger, S. Sen, and A. Sher, J. Electron. Mater. 29, 676 (2000).

    Article  Google Scholar 

  9. M. Carmody, D. Lee, M. Zandian, J. Phillips, and J. Arias, J. Electron. Mater. 32, 710 (2003).

    Article  Google Scholar 

  10. C. Fulk, T. Parodos, P. Lamarre, S. Tobin, P. LoVecchio, and J. Markunas, J. Electron. Mater. 38, 8 (2009).

    Article  Google Scholar 

  11. J.H. van der Merwe, J. Appl. Phys. 34, 123 (1963).

    Article  Google Scholar 

  12. J.Y. Tsao and B.W. Dodson, Appl. Phys. Lett. 53, 848 (1988).

    Article  Google Scholar 

  13. J.Y. Tsao and B.W. Dodson, Surf. Sci. 228, 260 (1990).

    Article  Google Scholar 

  14. M. Li, R. Gall, C.R. Becker, T. Gerhard, W. Faschinger, and G. Landwehr, J. Appl. Phys. 82, 4860 (1997).

    Article  Google Scholar 

  15. S.M. Johnson, J.L. Johnson, W.J. Hamilton, D.B. Leonard, T.A. Strand, E.A. Patten, J.M. Peterson, J.H. Durham, V.K. Randall, T.J. deLyon, J.E. Jensen, and M.D. Gorwitz, J. Electron. Mater. 29, 680 (2000).

    Article  Google Scholar 

  16. R.H. Sewell, C.A. Musca, J.M. Dell, L. Faraone, B.F. Usher, and T. Dieing, J. Electron. Mater. 34, 795 (2005).

    Article  Google Scholar 

  17. T. Skauli, T. Colin, and S. Løvold, J. Cryst. Growth 172 97 (1997). https://doi.org/10.1016/S0022-0248(96)00732-4

  18. W.L. Bond, Acta Cryst. 13, 814 (1960).

    Article  Google Scholar 

  19. E.C. Piquette, M. Zandian, D.D. Edwall, and J.M. Arias, J. Electron. Mater. 30, 6 (2001).

    Article  Google Scholar 

  20. A.J. Wilkinson, G.R. Anstis, J.T. Czernuszka, N.J. Long, and P.B. Hirsch, Philos. Mag. A 68, 59 (1993).

    Article  Google Scholar 

  21. S.D. Carnevale, J.I. Deitz, J.A. Carlin, Y.N. Picard, D.W. McComb, M. De Graef, S.A. Ringel, and T.J. Grassman, IEEE J. Photovolt. 5, 676 (2015).

    Article  Google Scholar 

  22. K. Mukherjee, B.A. Wacaser, S.W. Bedell, and D.K. Sadana, Appl. Phys. Lett. 110, 232101 (2017).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Teledyne Scientific and Imaging, Camarillo, CA, 93012, USA

    B. Shojaei, R. Cottier, D. Lee, E. Piquette, M. Carmody, M. Zandian & A. Yulius

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  1. B. Shojaei
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  2. R. Cottier
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  3. D. Lee
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  4. E. Piquette
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  5. M. Carmody
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  6. M. Zandian
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  7. A. Yulius
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Correspondence to B. Shojaei.

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Shojaei, B., Cottier, R., Lee, D. et al. Full-Wafer Strain and Relaxation Mapping of Hg1−xCdxTe Multilayer Structures Grown on Cd1−yZnyTe Substrates. J. Electron. Mater. 48, 6118–6123 (2019). https://doi.org/10.1007/s11664-019-07289-1

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  • DOI: https://doi.org/10.1007/s11664-019-07289-1

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