Abstract
HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.
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Reddy, M., Lofgreen, D.D., Jones, K.A. et al. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe. J. Electron. Mater. 42, 3114–3118 (2013). https://doi.org/10.1007/s11664-013-2660-6
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DOI: https://doi.org/10.1007/s11664-013-2660-6