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High Performance of a Non-Polar AlGaN-Based DUV-LED with a Quaternary Superlattice Electron Blocking Layer

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Abstract

The lattice-matched AlInGaN/AlGaN quaternary superlattice electron blocking layer (EBL) has been applied in the a-plane non-polar AlGaN-based deep ultraviolet light-emitting diode (DUV-LED) to improve the DUV-LED performance. Compared to the a-plane DUV-LED with traditional AlGaN EBL, the internal quantum efficiency (IQE) of the DUV-LED with lattice-matched quaternary superlattice EBL can be enhanced by 57.1% and the optical output power is upgraded about 1.67 times at 200 mA. These results can be interpreted as the ameliorated effective barrier height for carriers, resulting in enhanced electron blocking capability and hole injection efficiency, leading to improved radiative recombination in the active region and eventually boosted optical and electrical performance.

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Acknowledgments

This work was supported by the Ph.D. Supporting Project of the Jinling Institute of Technology (Grant No. jit-b-201830), Hatch Project of Jinling Institute of Technology (Grant No. jit-fhxm-201904), National Natural Science Foundation of China (Grant No. 62005026).

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Authors and Affiliations

  1. School of Network and Communication Engineering, Jinling Institute of Technology, Nanjing, 210096, Jiangsu, China

    Qian Dai

  2. Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, Jiangsu, China

    Qian Dai, Xiong Zhang & Zilu Wu

  3. College of Physics Science and Technology, Yangzhou University, Yangzhou, 225002, Jiangsu, China

    Xianghua Zeng

  4. College of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, Jiangsu, China

    Shuchang Wang

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  1. Qian Dai
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Correspondence to Qian Dai.

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Dai, Q., Zhang, X., Wu, Z. et al. High Performance of a Non-Polar AlGaN-Based DUV-LED with a Quaternary Superlattice Electron Blocking Layer. J. Electron. Mater. 51, 5389–5394 (2022). https://doi.org/10.1007/s11664-022-09778-2

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  • DOI: https://doi.org/10.1007/s11664-022-09778-2

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