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Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes

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Abstract

We present the enhancement of ultraviolet (UV) light-emitting diodes (LEDs) using numerical analysis. We have employed a compositionally graded quaternary (AlInGaN) electron blocking layer (EBL) instead of ternary/conventional (AlGaN) EBL. Comparison between our proposed device and reference device reveal that our proposed device shows improved radiative recombination rate and, hence, high emission spectrum. Consequently, the proposed device structure exhibits considerable reduction in efficiency droop at high current density.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors would like to thank Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) and STR® Group (Russia) for lending needed support for this work.

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Authors and Affiliations

  1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan

    Muhammad Usman, Shahzeb Malik, Shazma Ali, Sana Saeed, Abdur-Rehman Anwar & Munaza Munsif

  2. Faculty of Computer Sciences and Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan

    Masroor Hussain

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  1. Muhammad Usman
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  2. Shahzeb Malik
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Correspondence to Muhammad Usman.

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Usman, M., Malik, S., Hussain, M. et al. Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes. Opt Rev 29, 498–503 (2022). https://doi.org/10.1007/s10043-022-00766-9

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