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Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer

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Abstract

The low internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low IQE include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells. In this paper, we propose a gradual Al-composition p-type AlGaN (p-AlGaN) conduction layer to improve the light emitting properties of AlGaN-based DUV-LED. Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED. Consequently, the IQE of our optimazited DUV-LED is increased by 162% in comparison with conventional DUV-LEDs.

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Authors and Affiliations

  1. Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan, 250100, China

    Ping-yang Huang  (黄平洋), Qing-pu Wang  (王卿璞) & Ming-sheng Xu  (徐明升)

  2. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China

    Long-fei Xiao  (肖龙飞), Xiu-fang Chen  (陈秀芳) & Xian-gang Xu  (徐现刚)

  3. School of Mechatronics Engineering, Guizhou Minzu University, Guiyang, 550025, China

    Jing Huang  (黄静)

Authors
  1. Ping-yang Huang  (黄平洋)
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  2. Long-fei Xiao  (肖龙飞)
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  3. Xiu-fang Chen  (陈秀芳)
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  4. Qing-pu Wang  (王卿璞)
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  5. Ming-sheng Xu  (徐明升)
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  6. Xian-gang Xu  (徐现刚)
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  7. Jing Huang  (黄静)
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Corresponding author

Correspondence to Ming-sheng Xu  (徐明升).

Additional information

This work has been supported by the Key Research and Development Program of Shandong Province (Nos.2018GGX101027, 2017GGX201002 and 2016GGX4101), the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University China (No.LH20157221), the Yantai “13th Five-Year” Marine Economic Innovation and Development Demonstration City Project (no.YHCXZB-L-201703), and the Fundamental Research Funds of Shandong University in China (Nos.2018WLJH87, 2018JCG01 and 2017TB0021).

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Huang, Py., Xiao, Lf., Chen, Xf. et al. Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer. Optoelectron. Lett. 16, 279–283 (2020). https://doi.org/10.1007/s11801-020-0072-4

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  • DOI: https://doi.org/10.1007/s11801-020-0072-4

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