Abstract
The thermal, electrical and morphological characterization of poly(3-hexylthiophene-2,5diyl) (P3HT) is presented and discussed. Thermal analyses revealed high glass transition, melting and degradation temperatures, indicating high stability of the polymer to annealings in the range 25–200°C. Electrical measurements were performed in spin-coated devices constructed using indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) in the sandwich structure ITO/PEDOT:PSS/P3HT/Al. The devices were thermally treated at 25°C, 100°C, 150°C, and 200°C prior to the measurements. Characteristic curves of current density versus voltage showed that the injection of charge carriers is governed by tunneling at high electric fields. Hole mobility was estimated by impedance spectroscopy, showing a maximum value of 8.6 × 10−5 cm2/Vs for annealed films at 150°C. A thermally stimulated current technique was used to analyze the trap density in the P3HT and its respective energies for all devices, presenting the lowest trap density for annealed films at 150°C. Morphological features observed by atomic force microscopy showed that the 150°C thermally treated film presents the best interface condition of the four investigated annealing temperatures.
Similar content being viewed by others
References
K. Cnops, B.P. Rand, D. Cheyns, B. Verreet, M.A. Empl, and P. Heremans, Nat. Commun. 5, 3406 (2013).
A. Roigé, M.C. Quiles, J.O. Osso, M.I. Alonso, L.F. Vega, and M. Garriga, Synth. Met. 161, 2570 (2012).
K. Ali, U. Pietsch, and S. Grigorian, J. Appl. Crystallogr. 46, 908 (2013).
W. Aloui, A. Ltaief, and A. Bouazizi, Superlattices Microstruct. 64, 581 (2013).
W. Cao, Y. Zheng, Z. Li, E. Wrzesniewski, W.T. Hammond, and J. Xue, Org. Electron. 13, 2221 (2012).
M. Manceau, D. Angmo, M. Jorgensen, and F.C. Krebs, Org. Electron. 12, 566 (2011).
Y.J. Cho, J.Y. Lee, and S.R. Forrest, Appl. Phys. Lett. 103, 193301 (2013).
Y.C. Huang, H.C. Chia, C.M. Chuang, C.S. Tsao, C.Y. Chen, and W.F. Su, Sol. Energy Mater. Sol. Cells 114, 24 (2013).
J.Y. Oh, M. Shin, T.I.I. Lee, W.S. Jang, Y.J. Lee, C.S. Kim, J.W. Kang, J.M. Myoung, H.K. Baik, and U. Jeong, Macromolecules 46, 3534 (2013).
M.A. Rahman, A. Rahim, M. Maniruzzaman, K. Yang, C. Lee, H. Nam, H. Soh, and J. Lee, Sol. Energy Mater. Sol. Cells 95, 3573 (2011).
I. Etxebarria, J.G. Tait, R. Gehlhaar, R. Pacios, and D. Cheyns, Org. Electron. 14, 430 (2013).
O. Oklobia and T.S. Shafai, Solid-State Electron. 87, 64 (2013).
H. Hoppe and N.S. Sariciftci, J. Mater. Res. 19, 1924 (2004).
G. Paternó, F. Cacialli, and V.G. Sakai, Chem. Phys. 427, 142 (2013).
W. Ma, C. Yang, X. Gong, K. Lee, and A.J. Heeger, Adv. Funct. Mater. 15, 1617 (2005).
X. Yang, J. Loos, S.C. Veenstra, W.J.H. Verhees, M.M. Wienk, J.M. Kroon, M.A.J. Michels, and R.A.J. Janssen, Nano Lett. 5, 579 (2005).
O. Oklobia and T.S. Shafai, Sol. Energy Mater. Sol. Cells 117, 1 (2013).
J.Y. Kim, S. Noh, J. Kwak, and C. Lee, J. Nanosci. Nanotechnol. 13, 3360 (2013).
S. Rathi, G. Chauhan, S.K. Gupta, R. Srivastava, and A. Singh, J. Electron. Mater. 46, 1235 (2017).
Z. Chiguvare, J. Parisi, and V. Dyakonov, Z. Naturforsch. 62a, 609 (2007).
D. Natali and M. Sampietro, J. Appl. Phys. 92, 5310 (2002).
P.W.M. Blom, M.J.M. Jong, and J.J.M. Vleggaar, Appl. Phys. Lett. 68, 3308 (1996).
P. Anjaneyulu, C.S.S. Sangeeth, and R. Menon, J. Appl. Phys. 107, 093716 (2010).
E. Barsoukov and J.R. MacDonald, Impedance Spectroscopy: Theory, Experimental and Applications (New Jersey: Wiley, 2005).
H.C.F. Martens, J.N. Huiberts, and P.W.M. Blom, Appl. Phys. Lett. 77, 1852 (2000).
H.C. Martens and H.B. Brom, Phys. Rev. B 60, R8489 (1999).
P. Stallinga, A.R.V. Benvenho, E.C.P. Smits, S.G.J. Mathijssen, M. Cölle, H.L. Gomes, and D.M. Leeuw, Org. Electron. 9, 735 (2008).
J.V. Li, A.M. Nardes, Z. Liang, S.E. Shaheen, B.A. Gregg, and D.H. Levi, Org. Electron. 12, 1879 (2011).
T. Okachi, T. Nagase, T. Kobayashi, and H. Naito, Thin Solid Films 517, 1331 (2008).
J.M. Montero and J. Bisquert, J. Appl. Phys. 110, 043705 (2011).
K.K.H. Chan, S.W. Tsang, H.K.H. Lee, F. So, and S.K. So, J. Polym. Sci. Part B Polym. Phys. 51, 649 (2013).
Y.I. Lee, J.H. Youn, M.S. Ryu, J. Kim, J. Jang, and H.T. Moon, J. Appl. Phys. 108, 054506 (2010).
C.M. Kang, S. Kim, Y. Hong, and C. Lee, Thin Solid Films 518, 889 (2009).
M. Lada, Appl. Phys. Lett. 93, 143308 (2008).
W. Aloui, A. Ltaief, and A. Bouazizi, Microelectron. Eng. 129, 96 (2014).
F.A. Roghabadi, M. Kokabi, V. Ahmadi, and G. Abaeiani, Thin Solid Films 621, 19 (2017).
J.G. Simmons and G.W. Taylor, Phys. Rev. B 5, 1619 (1972).
P. Bräunlich, Thermally stimulated relaxation in solids (New York: Springer, 1979).
N. Von Malm, R. Schmechel, and H. von Seggern, Synth. Met. 126, 87 (2002).
C. Renaud and T.P. Nguyen, J. Appl. Phys. 106, 053707 (2009).
M. Pranaitis, V. Janonis, A. Sakavicius, and V. Kazukauskas, Semicond. Sci. Technol. 26, 085021 (2011).
J. Schafferhans, A. Baumann, A. Wagenpfahl, C. Deibel, and V. Dyakonov, Org. Electron. 11, 1693 (2010).
C.Y. Yu, T.H. Jen, S.A. Chen, and A.C.S. Appl, Mater. Interfaces 5, 4086 (2013).
A.L. Domanski, I. Lieberwirth, E. Sengupta, K. Landfester, H.J. Butt, R. Berger, J. Rauh, V. Dyakonov, and C. Deibel, J. Phys. Chem. C 117, 23495 (2013).
R. Ramani, J. Srivastava, and A. Alam, Thermochim. Acta 499, 34 (2010).
A. Rodrigues, M.C.R. Castro, A.S.F. Farinha, M. Oliveira, J.P.C. Tomé, A.V. Machado, M.M.M. Raposo, L. Hilliou, and G. Bernardo, Polym. Test. 32, 1192 (2013).
J. Zhao, A. Swinnen, G.V. Assche, J. Manca, D. Vabderzande, and B.V. Mele, J. Phys. Chem. B 113, 1587 (2009).
C.S. Lee and M.D. Dadmun, Polymer 55, 4 (2014).
S.M. Cassemiro, C. Zanlorenzi, T.D.Z. Atvars, G. Santos, F.J. Fonseca, and L.C. Akcelrud, J. Lumin. 134, 670 (2013).
A.R. Adhikari, M. Huang, H. Bakhru, M. Chipara, C.Y. Ryu, and P.M. Ajayan, Nanotechnology 17, 5947 (2006).
G.F. Malgas, C.J. Arendse, S. Mavundla, and F.R. Cummings, J. Mater. Sci. 43, 5599 (2008).
M. Koehler and I.A. Hummelgen, Appl. Phys. Lett. 70, 3254 (1997).
H. K. Henisch, Semiconductor Contacts: An Approach to Ideas and Models, International Series of Monographs on Physics, 70 (1984) Clarendon Press, Oxford.
Z. Chiguvare, J. Parisi, and V. Dyakonov, J. Appl. Phys. 94, 2440 (2003).
S.M. Sze, Physics of Semiconductor Devices (New York: Wiley, 1981).
G. Garcia-Belmonte, A. Munar, E.M. Barea, J. Bisquert, I. Ugarte, and R. Pacios, Adv. Organic Electron. 9, 847 (2008).
A. Guerrero, H. Heidari, T.S. Ripolles, A. Kovalenko, M. Pfannmöller, S. Bals, L.D. Kauffmann, J. Bisquert, and G. Garcia-Belmonte, Adv. Energy Mater. 5, 1401997 (2015).
J. Plans, M. Zielinski, and M. Kryszewski, Phys. Rev. B 23, 6557 (1981).
P. Stallinga, Electrical Characterization of Organic Electronic Materials and Devices, 1st ed. (London: Wiley, 2009).
Z. Fang, L. Shan, T.E. Schlesinger, and A.G. Milnes, J. Mater. Sci. Eng. B 5, 397 (1990).
J. Schafferhans, A. Baumann, C. Deibel, and V. Dyakonov, Appl. Phys. Lett. 93093303 (2008).
T.A.T. Cowell and J. Woods, Br. J. Appl. Phys. 18, 1045 (1967).
M.A. Baldo and S.R. Forrest, Phys. Rev. B 64, 08520 (2001).
A.J. Campbell, D.D.C. Bradley, and D.G. Lidzey, J. Appl. Phys. 82, 6326 (1997).
J. de F. P. Souza, E.L. Kowalski, L.C. Akcelrud, and J.P.M. Serbena, J. Solid State Electr. 18, 3497 (2014).
K. Kawano and C. Adachi, Adv. Funct. Mater. 19, 3934 (2009).
A. Foertig, J. Rauh, V. Dyakonov, and C. Deibel, Phys. Rev. B 86, 115302 (2012).
P. Yu, A. Migan-Dubois, J. Alvarez, A. Darga, V. Vissac, D. Mencaraglia, Y. Zhou, and M. Krueger, J. Non-Cryst. Solids 358, 2537 (2012).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Souza, J.F.P., Serbena, J.P.M., Kowalski, E.L. et al. Determination of P3HT Trap Site Energies by Thermally Stimulated Current. J. Electron. Mater. 47, 1611–1619 (2018). https://doi.org/10.1007/s11664-017-5965-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-017-5965-z