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Magnetoresistance in electrochemically deposited polybithiophene thin films

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Abstract

Magnetoresistance phenomenon on organic semiconductors has been studied mostly on spin-coated or vacuum thermal sublimated materials. In this work, electrochemistry is used as organic deposition technique. We report electrical measurements with an applied magnetic field on devices constructed in the sandwich structure indium tin oxide (ITO)/poly(bithiophene) (PBT)/aluminum (Al). The PBT polymer was electrochemically deposited on ITO. Hole mobility of 2.6 × 10−5 cm2/Vs was measured by impedance spectroscopy measurements, and thermally stimulated current measurements indicated two trapping states with activation energies around E 1–3 = 0.49 eV and E 4 = 0.51 eV. The interface ITO/PBT was characterized as a tunneling junction with ~0.9 eV energy barrier for hole injection from ITO. The highest magnetoresistance, ~0.6 %, was observed for a 273-nm PBT thickness, independent on direction between current and magnetic field.

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Acknowledgments

The authors would like to thank Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq), Universidade Federal do Paraná (UFPR), and Institutos Lactec for financial and technical support, and Prof. Ivo A. Hummelgen for fruitful discussions and laboratory facilities.

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Authors and Affiliations

  1. Paulo Scarpa Polymer Laboratory (LaPPS), Universidade Federal do Paraná, Caixa Postal 19081, 81531-990, Curitiba, PR, Brazil

    J. de F. P. Souza & L. C. Akcelrud

  2. Divisão de Sistemas Elétricos, Instituto de Tecnologia para o Desenvolvimento—LACTEC, Universidade Federal do Paraná, Caixa Postal 19067, 81531-980, Curitiba, PR, Brazil

    E. L. Kowalski

  3. Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990, Curitiba, PR, Brazil

    J. P. M. Serbena

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  1. J. de F. P. Souza
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  2. E. L. Kowalski
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  3. L. C. Akcelrud
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  4. J. P. M. Serbena
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Correspondence to J. P. M. Serbena.

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Souza, J.d.F.P., Kowalski, E.L., Akcelrud, L.C. et al. Magnetoresistance in electrochemically deposited polybithiophene thin films. J Solid State Electrochem 18, 3491–3497 (2014). https://doi.org/10.1007/s10008-014-2576-y

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  • DOI: https://doi.org/10.1007/s10008-014-2576-y

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