Abstract
A blend of poly(3-hexylthiophene-2,5diyl) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) is popularly used as an active medium in polymeric solar devices. According to the most recent understanding, the blend is a three-phase system contrary to its earlier understanding of two-phase bicontinuous network. We have synthesized a P3HT–PCBM based layered heterostructure system by spin coating and thermal vacuum evaporations. Current density (J) was measured as a function of applied electric field (E) across the system bound between two metal electrodes. J–E relations were analyzed into the backdrop of space charge limited current model and Schottky model. The later was used to predict dc-dielectric constants from the linear slopes of ln (J) versus E 1/2. The curves were not monotonously linear, but observe a knee-bend separating into two linear segments for each curve. Thermal annealing from 40°C to 80°C was used as an activation tool for driving changes in the internal morphology via inter-diffusion of polymers and current measurements were performed at room temperature after each annealing. At the last stage of annealing the two linear slopes were highly distinct. The presence of sharp knee-bend results in approximately 20 times jump in dielectric constant as a function of electric field. Such high jumps in dielectric constant illustrate the potential for switching applications and charge storage. The high dielectric constants can be understood in terms of space charge polarization due to isolated domains which hindrance to charge transport. The high dielectric constants were confirmed by another experiment of capacitance measurements of a different set of similar samples. A study of thermal evolution of internal morphology was also carried out using x-ray diffraction and scanning electron microscopy techniques to correlate the morphological changes with the transport properties.
Similar content being viewed by others
References
S.R. Forrest, Nature 428, 911 (2004).
G. Li, R. Zhu and Y. Yang, Nat. Photonics 6, 153 (2012).
K. Maex, M.R. Baklanov, D. Shamiryan, F. Lacopi, S.H. Brongersma, and Z.S. Yanovitskaya, J. Appl. Phys. 93, 8793 (2003).
J.Y. Kim, J. Lee, W.H. Lee, I.N. Kholmanov, Y. Hao, H. Chou, D. Akinwande, R.S. Ruoff, J.W. Suk, and T.Y. Kim, ACS Nano 8, 269 (2014).
Q.M. Zhang, H. Li, M. Poh, F. Xia, Z.-Y. Cheng, H. Xu, and C. Huang, Nature 419, 284 (2002).
E.J.G. Santos and E. Kaxiras, Nano Lett. 13, 898 (2013).
M.T. Dang, L. Hirsch, and G. Wantz, Adv. Mater. 23, 3597 (2011).
X. Yang, J. Loos, S.C. Veenstra, W.J.H. Verhees, M.M. Wienk, J.M. Karoon, M.A.J. Michels, and R.A.J. Janssen, Nano Lett. 4, 579 (2005).
W. Yin and M. Dadmun, ACS Nano 5, 4756 (2011).
S. Mukherjee, C.M. Proctor, G.C. Bazan, T.Q. Nguyen, and H. Ade, Adv. Energy Mater. 5, 1500877 (2015).
B.A. Collins, E. Gann, L. Guinard, X. He, C.R. McNeill, and H. Ade, J. Phys. Chem. Lett. 1, 3160 (2010).
B.A. Collins, J.R. Tumbleston, and H. Ade, J. Phys. Chem. Lett. 2, 3135 (2011).
T. Agostinelli, S. Lilliu, J.G. Labram, M.C. Quiles, M. Hampton, E. Pires, J. Rawle, O. Bikondoa, D.D.C. Bradley, T.D. Anthopoulos, J. Nelson, and J.E. Macdonald, Adv. Funct. Mater. 21, 1701 (2011).
H. Kim, W.W. So, and S.J. Moon, Sol. Energy Mater. Sol. Cells 91, 581 (2007).
Y.-C. Huang, S.-Y. Chuang, M.-C. Wu, H.-L. Chen, C.-W. Chen, and W.-F. Su, J. Appl. Phys. 106, 034506 (2009).
A.J. Moule, S. Allarad, N.M. Kronenberg, A. Tsami, U. Scherf, and K. Meerholz, J. Phys. Chem. C 112, 12583 (2008).
A. Singh and M. Mukherjee, Phys. Rev. E 70, 051608 (2004).
A. Solanki, B. Wu, T. Salim, Y.M. Lam, and T.C. Sum, Phys. Chem. Chem. Phys. 17, 26111 (2015).
W. Wang, S. Guo, E. Herzing, K. Sarkar, M. Schindler, D. Magerl, M. Philipp, J. Perlich, and P. Muller-Buschbaum, J. Mater. Chem. A 4, 3743 (2016).
J.A. Amonoo, A. Li, G.E. Purdum, M.E. Sykes, B. Huang, E.F. Palermo, A.J. McNeil, M. Shtein, Y.-L. Loo, and P.F. Green, J. Mater. Chem. A 3, 20174 (2015).
J.A. Reinspach, C. Tassone, Z. Bao, Y. Diao, B.J. Worfolk, G. Giri, T. Sachse, M. Presselt, K. England, M.F. Toney, Y. Zhou, S. Mannsfeld, and A.C.S. Appl, Mater. Interfaces 8, 1742 (2016).
L. Lu, T. Zheng, Q. Wu, A.M. Schneider, D. Zhao, and L. Yu, Chem. Rev. 115, 12666 (2015).
M. Mukherjee and A. Singh, Phys. Stat. Sol. (b) 244, 928 (2007).
P. Peumans, A. Yakimov, and S.R. Forrest, J. Appl. Phys. 93, 3693 (2003).
B.C. Thompson and J.M.J. Frechet, Angew. Chem. Int. Ed. 47, 58 (2008).
C.J. Brabec, Sol. Energy Mater. Sol. Cells 83, 273 (2004).
N. Gupta, G.F. Alapatt, R. Podila, R. Singh, and K.F. Poole, Int. J. Photoenergy 2009, 154059 (2009).
X. Yang, J. Loos, S.C. Veenstra, W.J.H. Verhees, M.M. Wienk, J.M. Kroon, M.A.J. Michelsand, and R.A.J. Janssen, Nano Lett. 5, 579 (2005).
J. Guo, H. Ohkita, H. Benten, and S. Ito, J. Am. Chem. Soc. 132, 6154 (2010).
M. Jorgensen, K. Norman, and F.C. Krebs, Solar Energy Mater. Solar Cell 90, 686 (2008).
K. Norrman, M.V. Madsen, S.A. Gevorgyan, and F.C. Krebs, J. Am. Chem. Soc. 132, 16883 (2010).
S.M. Sze, Physics of Semiconductor Devices (New York: Wiley-Interscience, 1969), pp. 224–237.
P. Gonon, A. Deneuville, F. Fontaine, and E. Gheeraert, J. Appl. Phys. 78, 6633 (1995).
R.H. Fowler and L. Nordheim, Royal Soc. 2nd Proc. 119A, 173 (1928).
O. Mitrofanov and M. Manfra, J. Appl. Phys. 95, 6414 (2004).
M.P. Houng, Y.H. Wang, and W.J. Chang, J. Appl. Phys. 86, 1488 (1999).
A.J. Campbell, D.D.C. Bradley, and D.G. Lidzey, J. Appl. Phys. 82, 6326 (1997).
S.C. Jain, A.K. Kapoor, W. Geens, J. Poortmans, R. Mertens, and M. Willander, J. Appl. Phys. 92, 3752 (2002).
S.A. Rutledge and A.S. Helmy, J. Appl. Phys. 114, 133708 (2013).
V. Singh, S. Arora, P.K. Bhatnagar, M. Arora, and R.P. Tandon, J. Polym. Res. 19, 9899 (2012).
K. Efimenko, V. Rybka, V. Svorcik, and V. Hnatowicz, Appl. Phys. A 63, 479 (1999).
M. Knipper, J. Parisi, K. Coakley, and C. Waldaul, Z. Naturforsch 62A, 490 (2007).
M. Mukherjee and A. Singh, Phys. Stat. Sol. (b) 244, 928 (2007).
H.A. Pohl and M. Pollak, J. Chem. Phys. 66, 4031 (1977).
M. Pollak and H.A. Pohl, J. Chem. Phys. 63, 2980 (1975).
J.Y. Kim and C.D. Frisbie, J. Phys. Chem. C 112, 17726 (2008).
Acknowledgements
The research was funded by Department of Science and Technology (DST)—Rajasthan under the sanctioned project P7 (3) S&T/R& D/2008/8001-12. We thankfully acknowledge DST-Curie grant for funding of SEM equipment. SR is thankful to DST for providing research fellowship. SR is also thankful to Sunil Kumar and Manoj Kumar in assisting XRD and capacitance measurements.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Rathi, S., Chauhan, G., Gupta, S.K. et al. Analysis of Blockade in Charge Transport Across Polymeric Heterojunctions as a Function of Thermal Annealing: A Different Perspective. J. Electron. Mater. 46, 1235–1247 (2017). https://doi.org/10.1007/s11664-016-5097-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-016-5097-x