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Enhancement in Thermoelectric Properties of TiS2 by Sn Addition

  • Topical Collection: International Conference on Thermoelectrics 2017
  • Published:
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Abstract

A series of Sn added TiS2 (TiS2:Sn x ; x = 0, 0.05, 0.075 and 0.1) were prepared by solid state synthesis with subsequent annealing. The Sn atoms interacted with sulfur atoms in TiS2 and formed a trace amount of misfit layer (SnS)1+m(TiS2−δ)n compound with sulfur deficiency. A significant reduction in electrical resistivity with moderate decrease in the Seebeck coefficient was observed in Sn added TiS2. Hence, a maximum power factor of 1.71 mW/m-K2 at 373 K was obtained in TiS2:Sn0.05. In addition, the thermal conductivity was decreased with Sn addition and reached a minimum value of 2.11 W/m-K at 623 K in TiS2:Sn0.075, due to the impurity phase (misfit phase) and defects (excess Ti) scattering. The zT values increased from 0.08 in pristine TiS2 to an optimized value of 0.46 K at 623 K in TiS2:Sn0.05.

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Authors and Affiliations

  1. Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Sec. 4, Roosevelt Road, Taipei, Taiwan

    Anbalagan Ramakrishnan & Kuei-Hsien Chen

  2. Center for Condensed Matter Sciences, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, Taiwan

    Anbalagan Ramakrishnan, Sankar Raman, Li-Chyong Chen & Kuei-Hsien Chen

  3. Institute of Physics, Academia Sinica, No. 2, Research Institute Road, Taipei, Taiwan

    Sankar Raman

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  1. Anbalagan Ramakrishnan
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  2. Sankar Raman
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Correspondence to Kuei-Hsien Chen.

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Ramakrishnan, A., Raman, S., Chen, LC. et al. Enhancement in Thermoelectric Properties of TiS2 by Sn Addition. J. Electron. Mater. 47, 3091–3098 (2018). https://doi.org/10.1007/s11664-017-5913-y

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  • DOI: https://doi.org/10.1007/s11664-017-5913-y

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