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Fabrication of Cu(In,Ga)(S,Se)2 Solar Cells by Solution Method

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Abstract

Cu(In,Ga)S2 (CIGS) nanoparticles were synthesized by hot-injection method at temperature of 240°C under nitrogen ambient, then dispersed in hexanethiol to form stable ink. CIGS thin films were prepared by doctor-blade method and annealed under different amounts of selenium at 540°C for 20 min. After annealing, the Cu(In,Ga)(S,Se)2 (CIGSSe) films showed increasing crystallinity, particle size, and Se concentration with increasing amount of selenium. In addition, only CIGSSe phase existed in the film after annealing. The properties of CIGSSe cells were improved with increasing amount of selenium. The optimal results were obtained for the sample prepared with 0.2 g Se, showing short-circuit photocurrent density (J SC) of 27.36 mA/cm2, open-circuit voltage (V OC) of 0.42 V, fill factor (FF) of 0.36, and conversion efficiency (η) of 4.2%. These results provide important insights into economically feasible production of CIGS-based solar cells.

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Authors and Affiliations

  1. Nano Optoelectronics Laboratory, Advanced Institute for Science and Technology, Hanoi University of Science and Technology, No. 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam

    Pham Anh Tuan, Vu Ngoc Phan, Nguyen Xuan Quang & Nguyen Duy Cuong

  2. School of Materials Science and Engineering, Hanoi University of Science and Technology, No. 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam

    Tran Duc Huy

  3. School of Chemical Engineering, Hanoi University of Science and Technology, No. 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam

    Dang Viet Anh Dung

  4. Faculty of Power System, Electric Power University, 235 Hoang Quoc Viet Str, Tu Liem Dist, Hanoi, Vietnam

    Pham Anh Tuan

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  1. Pham Anh Tuan
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  2. Vu Ngoc Phan
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  3. Tran Duc Huy
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  4. Dang Viet Anh Dung
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  5. Nguyen Xuan Quang
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  6. Nguyen Duy Cuong
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Correspondence to Nguyen Duy Cuong.

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Tuan, P.A., Phan, V.N., Huy, T.D. et al. Fabrication of Cu(In,Ga)(S,Se)2 Solar Cells by Solution Method. J. Electron. Mater. 46, 3453–3457 (2017). https://doi.org/10.1007/s11664-016-5236-4

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  • DOI: https://doi.org/10.1007/s11664-016-5236-4

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