Abstract
The effect of silver concentration was investigated for doped tin sulfide thin films for which y = [Ag]/[Sn] = 0, 2, 4, 6, 8, and 10 at.%. Structural, morphological, optical, and electrical properties were studied by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, spectrophotometry, and thermally stimulated current (TSC) spectroscopy. XRD analysis confirmed previous results, i.e. formation of a rocksalt structure with (111) and (200) as preferred orientations. Crystal quality was enhanced when the doping ratio was y = 4 at.%. Addition of silver to the deposited solution did not affect the crystal structure, because no secondary phases related to silver were observed, but it assisted grain growth up to the optimum ratio of 4 at.%. Below 6 at.% interference fringes were observed in transmission and reflection spectra, indicating good surface homogeneity. The optical bandgap energy decreased and the grain size increased when the doping level was y = 4 at.%. The envelope method was applied to the thin film doped at 4 at.%, and dispersion constants were determined by use of the Wemple and Spitzer–Fan models. TSC measurements indicated that the electrical properties at ambient temperature were governed by traps located in the bandgap. From Arrhenius plots, the activation energies of the trap levels were estimated to be approximately 0.28 eV and 1.3 eV.
Similar content being viewed by others
References
M. Devika, N.K. Reddy, and K.R. Gunasekhar, Thin Solid Films 520, 628 (2011).
C. Gao, H. Shen, and L. Sun, Appl. Surf. Sci. 257, 6750 (2011).
N. Revathi, S. Bereznev, J. Iljina, M. Safonova, E. Mellikov, and O. Volobujeva, J. Mater. Sci. 24, 4739 (2013).
V. Robles, J.F. Trigo, C. Guillén, and J. Herrero, J. Mater. Sci. 48, 3943 (2013).
A. Akkari, M. Reghima, C. Guasch, and N. Kamoun-Turki, J. Mater. Sci. 47, 1365 (2012).
M. Reghima, A. Akkari, M. Castagné, and N. Kamoun-Turki, J. Renew. Sustain. Energy 4, 011602 (2012).
M. Reghima, A. Akkari, C. Guasch, M. Castagné, and N. Kamoun-Turki, J. Renew. Sustain. Energy 5, 063109 (2013).
M. Reghima, A. Akkari, C. Guasch, and N. Kamoun-Turki, J. Electron. Mater. 43, 3138 (2014).
R. Mariappan, T. Mahalingam, and V. Ponnuswamy, Optik 122, 2216 (2011).
P. Lu, H. Jia, and S. Cheng, Adv. Mater. Res. 60–61, 11 (2009).
T.H. Sajeesh, A.S. Cherian, C.S. Kartha, and K.P. Vijayakumar, Energy Procedia 15, 325 (2012).
K.S. Kumar, C. Manoharan, S. Dhanapandian, and A.G. Manohari, Spectrochim. Acta A 115, 840 (2013).
M. Devika, N.K. Reddy, M. Prashantha, K. Ramesh, S.V. Reddy, Y.B. Hahn, and K.R. Gunasekhar, Phys. Status Solidi A 207, 1864 (2010).
M. Devika, N.K. Reddy, K. Ramesh, K.R. Gunasekhar, E.S.R. Gopal, and K.T.R. Reddy, J. Electrochem. Soc. 153, G727 (2006).
B. Ghosh, M. Das, P. Banerjee, and S. Das, Appl. Surf. Sci. 254, 6436 (2008).
K. Hartman, J.L. Johnson, M.I. Bertoni, D. Recht, M.J. Aziz, M.A. Scarpulla, and T. Buonassisi, Thin Solid Films 519, 7421 (2011).
P. Sinsermsuksakul, K. Hartman, S.B. Kim, J. Heo, L. Sun, H.H. Park, R. Chakraborty, T. Buonassisi, and R.G. Gordon, Phys. Lett. 102, 053901 (2013).
K.T.R. Reddy, N.K. Reddy, and R.W. Miles, Sol. Energy Mater. Sol. Cells 90, 3041 (2006).
Y. Yongli and C. Shuying, J. Semicond. 29, 2322 (2008).
K.S. Kumar, A.G. Manohari, S. Dhanapandian, and T. Mahalingam, Mater. Lett. 131, 167 (2014).
A. Akkari, M. Reghima, C. Guasch, and N. Kamoun-Turki, Adv. Mater. Res. 324, 101 (2011).
A. Akkari, C. Guasch, and N. Kamoun-Turki, J. Alloys Compd. 490, 180 (2010).
M. Ajili, M. Castagné, and N. KamounTurki, Superlattices Microstruct. 53, 213 (2013).
Y.-H. Ge, Y.-Y. Guo, W.-M. Shi, and Y.-H. Qiu, J. Shanghai Univ. 11, 403 (2007).
P. Jain and P. Arun, J. Semicond. 34, 093004 (2013).
H. Khallaf, G. Chai, O. Lupan, L. Chow, H. Heinrich, S. Park, and A. Schulte, Phys. Status Solidi A 206, 256 (2009).
A. Akkari, C. Guasch, M. Castagne, and N. Kamoun-Turki, J. Mater. Sci. 46, 6285 (2011).
A. Jebali, M.B. Rabeh, N. Khemiri, and M. Kanzari, Mater. Res. Bull. 61, 363 (2015).
J.F. Trigo, B. Asenjo, J. Herrero, and M.T. Gutiérrez, Sol. Energy Mater. Sol. Cells 92, 1145 (2008).
P.A. Nwofe, K.T.R. Reddy, J.K. Tan, I. Forbes, and R.W. Miles, Phys. Procedia 25, 150 (2012).
A.E. Abdelrahman, W.M.M. Yunus, A.K. Arof, and J. Non-Cryst, Solids 358, 1447 (2012).
E. Guneri, F. Gode, C. Ulutas, F. Kirmizigul, G. Altindemir, and C. Gumus, Chalcogenide Lett. 7, 685 (2010).
T.H. Sajeesh, K.B. Jinesh, M. Rao, K.C. Kartha, and K.P. Vijayakumar, Status Solidi A 209, 1274 (2012).
S.A. Vanalakar, S.W. Shin, G.L. Agawane, M.P. Suryawanshi, K.V. Gurav, P.S. Patil, and J.H. Kim, Ceram. Int. 40, 15097 (2014).
M. Reghima, A. Akkari, C. Guasch, and N. Turki-Kamoun, J. Renew. Sustain. Energy 7, 023128 (2015).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Reghima, M., Akkari, A., Guasch, C. et al. Structural, Optical, and Electrical Properties of SnS:Ag Thin Films. J. Electron. Mater. 44, 4392–4399 (2015). https://doi.org/10.1007/s11664-015-3971-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-015-3971-6