Skip to main content
SpringerLink
Log in

Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2-μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high- resolution x-ray diffraction and atomic force microscopy.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P.Y. Delaunay, B.M. Nguyen, D. Hofman, and M. Razeghi, Appl. Phys. Lett. 91, 231106 (2007).

    Article  Google Scholar 

  2. J.P. Perez, A. Laurain, L. Cerutti, I. Sagnes, and A. Garnache, Semicond. Sci. Technol. 25, 45021 (2010).

    Article  Google Scholar 

  3. O. Dier, C. Lin, M. Grau, and M.C. Amann, Semicond. Sci. Technol. 9, 1250 (2004).

    Article  Google Scholar 

  4. G.C. DeSalvo, R. Kaspi, and C.A. Bozada, J. Electrochem. Soc. 141, 3526 (1994).

    Article  Google Scholar 

  5. B. Klein, J. Montoya, N. Gautam, and S. Krishna, Appl. Phys. A 111, 671 (2013).

    Article  Google Scholar 

  6. E. Yablonovitch, T. Gmitter, J.P. Harbison, and R. Bhat, Appl. Phys. Lett. 51, 2222 (1987).

    Article  Google Scholar 

  7. M. Mehta, G. Balakrishnan, S. Huang, A. Khoshakhlagh, A. Jallipalli, P. Patel, M.N. Kutty, L.R. Dawson, and D.L. Huffaker, Appl. Phys. Lett. 89, 211110 (2006).

    Article  Google Scholar 

  8. M. Mehta, A. Jallipalli, J. Tatebayashi, M.N. Kutty, A. Albrecht, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker, IEEE Photon. Technol. Lett. 19, 1628 (2007).

    Article  Google Scholar 

  9. E. Plis, J.B. Rodriguez, G. Balakrishnan, Y.D. Sharma, H.S. Kim, T. Rotter, and S. Krishna, Semicond. Sci. Tech. 25, 085010 (2010).

    Article  Google Scholar 

  10. K.C. Nunna, S.L. Tan, C.J. Reyner, A.R.J. Marshall, B. Liang, A. Jallipalli, J.P.R. David, and D.L. Huffaker, IEEE Photon. Technol. Lett. 24, 218 (2012).

    Article  Google Scholar 

  11. S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson, and D.L. Huffaker, Appl. Phys. Lett. 88, 131911 (2006).

    Article  Google Scholar 

  12. C. Carter-Coman, R. Bicknell-Tassius, R.G. Benz, A.S. Brown, and N.M. Jokerst, J. Electrochem. Soc. 144, L29 (1997).

    Article  Google Scholar 

  13. H.J.J. Yeh and J.S. Smith, Appl. Phys. Lett. 64, 1466 (1994).

    Article  Google Scholar 

  14. A. Jallipalli, G. Balakrishnan, S.H. Huang, T.J. Rotter, K. Nunna, B.L. Liang, L.R. Dawson, and D.L. Huffaker, Nanoscale Res. Lett. 4, 1458 (2009).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Center for High Technology Materials, University of New Mexico, Albuquerque, NM, 87106, USA

    E. J. Renteria, A. J. Muniz, S. J. Addamane, D. M. Shima, C. P. Hains & G. Balakrishnan

Authors
  1. E. J. Renteria
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. J. Muniz
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. J. Addamane
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. M. Shima
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. C. P. Hains
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. G. Balakrishnan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to E. J. Renteria.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Renteria, E.J., Muniz, A.J., Addamane, S.J. et al. Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes. J. Electron. Mater. 44, 1327–1331 (2015). https://doi.org/10.1007/s11664-015-3625-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-015-3625-8

Keywords

Search

Navigation