Skip to main content
SpringerLink
Log in

Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Silicon-rich silicon nitride (SRSN) films were prepared by plasma-enhanced chemical vapor deposition. Silicon quantum dots (Si QDs) were obtained after high temperature annealing. Fourier transform infrared spectroscopy, x-ray diffraction, Raman and x-ray photoelectron spectroscopy spectra were used to describe the structure behaviors of the as-deposited and annealed samples. The hydrogen-related bonds disappeared when the annealing temperature was above 650°C for 30 min. Crystalline and amorphous Si QDs co-existed in the SRSN film annealed at 1100°C. The photoluminescence (PL) spectra of the SRSN under Xe lamp were studied. The red-shift and blue-shift of PL peaks were ascribed to the size and phase evolution of Si QDs, and the PL intensity strongly depended on the passivation condition of Si QDs. The charge storage effect was investigated on Al/the SRSN annealed at 1100°C/n-Si/Al structure by capacitance–voltage (C–V) measurements. The C–V hysteresis width increased to 1.8 V at the sweeping voltage of ±10 V.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B.H. Kim, C.H. Cho, J.S. Mun, M.K. Kwon, T.Y. Park, J.S. Kim, C.C. Byeon, J. Lee, and S.J. Park, Adv. Mater. 20, 3100 (2008).

    Article  Google Scholar 

  2. X.B. Zeng, W.G. Liao, G.Z. Wen, X.X. Wen, and W.J. Zheng, J. Appl. Phys. 115, 154314 (2014).

    Article  Google Scholar 

  3. R. Guerra, F. Cigarini, and S. Ossicini, J. Appl. Phys. 113, 143505 (2013).

    Article  Google Scholar 

  4. M. Molinari, H. Rinnert, and M. Vergnat, J. Appl. Phys. 101, 123532 (2007).

    Article  Google Scholar 

  5. C.H. Cheng, Y.C. Lien, C.L. Wu, and G.R. Lin, Opt. Express 21, 391 (2013).

    Article  Google Scholar 

  6. G.R. Lin, Y.C. Lien, and Y.H. Pai, J. Electrochem. Soc. 157, H256 (2010).

    Article  Google Scholar 

  7. Y.C. Lien, Y.H. Pai, and G.R. Lin, IEEE J. Quantum Elect. 46, 121 (2010).

    Article  Google Scholar 

  8. M. Porti, M. Avidano, M. Nafria, X. Aymerich, J. Carreras, O. Jambois, and B. Garrido, J. Appl. Phys. 101, 064509 (2007).

    Article  Google Scholar 

  9. C.D. Lin, C.H. Cheng, Y.H. Lin, C.L. Wu, Y.H. Pai, and G.R. Lin, Appl. Phys. Lett. 99, 243501 (2011).

    Article  Google Scholar 

  10. N.M. Park, S.H. Choi, and S.J. Park, Appl. Phys. Lett. 81, 1092 (2002).

    Article  Google Scholar 

  11. C.H. Cho, B.H. Kim, T.W. Kim, S.J. Park, N.M. Park, and G.Y. Sung, Appl. Phys. Lett. 86, 143107 (2005).

    Article  Google Scholar 

  12. H.L. Hao, L.K. Wu, and W.Z. Shen, Appl. Phys. Lett. 92, 121922 (2008).

    Article  Google Scholar 

  13. L. Mangolini, J. Vac. Sci. Technol. B 31, 020801 (2013).

    Article  Google Scholar 

  14. A.J. Nozik, Chem. Phys. Lett. 457, 3 (2008).

    Article  Google Scholar 

  15. G.R. Lin, Y.H. Pai, C.T. Lin, and C.C. Chen, Appl. Phys. Lett. 96, 263514 (2010).

    Article  Google Scholar 

  16. C.W. Jiang and M.A. Green, J. Appl. Phys. 99, 114902 (2006).

    Article  Google Scholar 

  17. J.S. Biteen, N.S. Lewis, H.A. Atwater, and A. Polman, Appl. Phys. Lett. 84, 5389 (2004).

    Article  Google Scholar 

  18. H. Mackel and R. Ludemann, J. Appl. Phys. 92, 2602 (2002).

    Article  Google Scholar 

  19. A.G. Aberle, Sol. Energy Mater. Sol. Cells 65, 239 (2001).

    Article  Google Scholar 

  20. X.J. Hao, E.-C. Cho, C. Flynn, Y.S. Shen, S.C. Park, G. Conibeer, and M.A. Green, Sol. Energy Mater. Sol. Cells 93, 273 (2009).

    Article  Google Scholar 

  21. S. Yamada, Y. Kurokawa, S. Miyajima, and M. Konagai, Nanoscale Res. Lett. 9, 246 (2014).

    Article  Google Scholar 

  22. B.H. Kim, C.H. Cho, S.J. Park, N.M. Park, and G.Y. Sung, Appl. Phys. Lett. 89, 063509 (2006).

    Article  Google Scholar 

  23. W.G. Liao, X.B. Zeng, X.X. Wen, W.J. Zheng, and W. Yao, J.␣Electron. Mater. 42, 3445 (2013).

    Article  Google Scholar 

  24. D. Gautam, E. Koyanagi, and T. Uchino, J. Appl. Phys. 105, 073517 (2009).

    Article  Google Scholar 

  25. H.L. Hao and W.Z. Shen, Nanotechnology 19, 455704 (2008).

    Article  Google Scholar 

  26. M. Zacharias and P. Streitenberger, Phys. Rev. B 62, 8391 (2000).

    Article  Google Scholar 

  27. N. Budini, P.A. Rinaldi, J.A. Schmidt, R.D. Arce, and R.H. Buitrago, Thin Solid Films 518, 5349 (2010).

    Article  Google Scholar 

  28. A.L. Patterson, Phys. Rev. 56, 978 (1939).

    Article  Google Scholar 

  29. T.W. Kim, C.H. Cho, B.H. Kim, and S.J. Park, Appl. Phys. Lett. 88, 123102 (2006).

    Article  Google Scholar 

  30. N.M. Park, C.J. Choi, T.Y. Seong, and S.J. Park, Phys. Rev. Lett. 86, 1355 (2001).

    Article  Google Scholar 

  31. B.H. Kim, C.H. Cho, T.W. Kim, N.M. Park, G.Y. Sung, and S.J. Park, Appl. Phys. Lett. 86, 091908 (2005).

    Article  Google Scholar 

  32. C.L. Wu and G.R. Lin, IEEE J. Sel. Top. Quant. 19, 1 (2013).

    Article  Google Scholar 

  33. S. Huang, S. Banerjee, R.T. Tung, and S. Oda, J. Appl. Phys. 94, 7261 (2003).

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by the National Natural Science Foundation of China under No. 51472096, Central University basic research funds (Grant No. 2014NY004) and the supporting technology project of Ministry of Education of China (Grant No. 62501040202). The authors acknowledge the Analytical and Testing Center of Huazhong University of Science and Technology for the PL, XRD, XPS, FTIR spectra and HRTEM spectra measurements and Optoelectronic Micro/nano Fabrication Faculty of Wuhan National Laboratory for Optoelectronics for the Raman spectra measurement.

Author information

Authors and Affiliations

  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China

    Wugang Liao, Xiangbin Zeng, Xixing Wen, Wenjun Zheng & Yangyang Wen

  2. Shenzhen Institute of Huazhong, University of Science and Technology, Shenzhen, 518000, China

    Wei Yao

Authors
  1. Wugang Liao
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Xiangbin Zeng
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Xixing Wen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Wenjun Zheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yangyang Wen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Wei Yao
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Xiangbin Zeng.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Liao, W., Zeng, X., Wen, X. et al. Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film. J. Electron. Mater. 44, 1015–1020 (2015). https://doi.org/10.1007/s11664-014-3614-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-014-3614-3

Keywords

Search

Navigation