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Light-triggered defect dynamics in silicon wafers: understanding degradation mechanisms

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Abstract

In this work, the effect of heat treatment on the minority carrier lifetime (τ) in boron-doped crystalline silicon wafers coated with a silicon nitride (SiNx:H) layer has been investigated. The results showed an initial increase in τ during the early phase of light exposure of the samples, which was attributed to the presence of iron–boron complexes in the c-Si wafers. However, this enhancement was followed by a decrease associated with the formation of boron-oxygen complexes, known as light-induced degradation. Moreover, kinetic models were used to analyze defect interactions in the wafers, showing a correlation between τ behavior and hydrogen-boron complex concentrations, and related by analytical techniques. In addition, the samples were subjected to a dark annealing step, resulting in further degradation due to the firing temperature process and the presence of hydrogen atoms in the silicon nitride layer. Finally, this study provides valuable insights into defect formation mechanisms in c-Si wafers that could improve the stability and efficiency optimization of silicon-based solar cells under operating conditions.

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Acknowledgements

The authors express their gratitude to the characterization staff service of the Research Center in Semiconductor Technology for Energy (CRTSE) Algiers and the Department of Physics, Faculty of Science, University of Badji Mokhtar Annaba, Algeria, for their invaluable support. This work received funding from the General Direction of Scientific Research and Technological Development of Algeria (DGRSDT/MESRS).

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Authors and Affiliations

  1. Laboratory of Semiconductors (LSC), Department of Physics, Faculty of Sciences, Badji Mokhtar University, Annaba, Algeria

    Yougherta Chibane

  2. Laboratory of Advanced Systems and Materials (LASMA), Department of Physics, Faculty of Sciences, Badji Mokhtar University, Annaba, Algeria

    Yacine Kouhlane

  3. Research Center in Semiconductor Technology for the Energetic (CRTSE), Algiers, Algeria

    Djoudi Bouhafs, Wafa Achour, Asmaa Mohammed-Krarroubi & Amar Khelfane

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  1. Yougherta Chibane
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  2. Yacine Kouhlane
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  3. Djoudi Bouhafs
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  4. Wafa Achour
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  5. Asmaa Mohammed-Krarroubi
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  6. Amar Khelfane
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Contributions

Study conception and design: Y. Chibane, Y. Kouhlane. Data collection: Y. Chibane, D. Bouhafs. Analysis of results: Z. W. Achour, A. Mohammed-Krarroubi, A. Khelfane. Interpretation of results: Y. Chibane, Y. Kouhlane. Draft manuscript preparation: Y. Chibane, Y. Kouhlane, D. Bouhafs. All authors reviewed the results and approved the final version of the manuscript.

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Correspondence to Yougherta Chibane.

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Chibane, Y., Kouhlane, Y., Bouhafs, D. et al. Light-triggered defect dynamics in silicon wafers: understanding degradation mechanisms. Appl. Phys. A 130, 367 (2024). https://doi.org/10.1007/s00339-024-07511-w

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