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Metal oxide ion gated transistors based sensors

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Abstract

Metal oxide ion-gated transistors (MOIGTs) have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenarios. By harnessing the advantageous combination of metal oxides’ high carrier mobility and facile surface customization, coupled with the potent signal amplification capabilities of ion-gated transistors, MOIGTs offer a promising avenue for discerning biomolecules, overseeing chemical reactions, pH levels, as well as facilitating gas or light determination. Over the past few decades, the MOIGT field has made remarkable strides in refining device physics, enhancing material properties, showcasing robust sensing capabilities, and broadening its application spectrum. These advancements have simultaneously unveiled new challenges and opportunities, necessitating interdisciplinary expertise to fully unlock the commercial potential of MOIGTs. In this comprehensive review, we offer a snapshot of this swiftly evolving technology, delve into its current applications, and provide insightful recommendations for future directions in the coming decade.

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China

    Yang Li, LeLe Wang, ZhongZhong Luo & Qiang Zhao

  2. State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China

    Yang Li, Yu Yao, LiWei Wang, YunCong Pang, ZhongZhong Luo, ShuJuan Liu & Qiang Zhao

  3. Department of Chemical Engineering, Polytechnique Montréal, Montréal, Québec, H3C3J7, Canada

    Subramanian Arunprabaharan

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  1. Yang Li
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  2. Yu Yao
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  9. Qiang Zhao
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Corresponding authors

Correspondence to Yang Li, ZhongZhong Luo or Qiang Zhao.

Additional information

This work was supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant No. NY221111), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK20220397, BK20230359), the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province (Grnant Nos. 22KJB430038, 22KJB510010), the National Natural Science Foundation of China (Grant Nos. 62204130, 62288102, and 62304112), and the National Funds for Distinguished Young Scientists (Grant No. 61825503).

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Li, Y., Yao, Y., Wang, L. et al. Metal oxide ion gated transistors based sensors. Sci. China Technol. Sci. 67, 1040–1060 (2024). https://doi.org/10.1007/s11431-023-2567-2

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