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Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films

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Abstract

With the purpose of investigating the origin of ferromagnetism (FM), Mn-doped ZnO thin films had been fabricated by radio frequency (rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped ZnO thin films was conducted by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mn-doped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn2+ on the ferromagnetic behavior, OV plays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.

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Authors and Affiliations

  1. Department of Physics, Tokyo University of Science, Tokyo, 162-8601, Japan

    SuJun Guan, Naho Nasu, Yuri Tamamoto, Maria Yamanobe & XinWei Zhao

  2. Department of Robotics, The Open University of Guangdong, Guangzhou, 510091, China

    Yu Zhang

  3. Department of Materials Science and Engineering, Xihua University, Chengdu, 610039, China

    XinWei Zhao

Authors
  1. SuJun Guan
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  2. Naho Nasu
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  3. Yu Zhang
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  4. Yuri Tamamoto
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  5. Maria Yamanobe
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  6. XinWei Zhao
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Correspondence to XinWei Zhao.

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Guan, S., Nasu, N., Zhang, Y. et al. Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films. Sci. China Technol. Sci. 62, 1755–1759 (2019). https://doi.org/10.1007/s11431-018-9463-6

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  • DOI: https://doi.org/10.1007/s11431-018-9463-6

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