Changes in the structure of polycrystalline indium oxide after irradiation with xenon ions with energies of 140 and 300 keV have been studied. Irradiation with xenon ions was found to change the chemical composition of indium oxide, was accompanied by phase transformations, increased the intensity of reflected x-ray lines of the indium oxide structure, and increased the unit-cell constant over the depth of the sample. The x-ray method was used to separate the elastic and inelastic effects of xenon ions on the structure of indium oxide. The concentration of xenon ions dissolved over the depth of the sample was determined as a function of the irradiation energy. A structural model of the dissolution of xenon ions in the indium oxide lattice was presented and explained the formation of an ionic bond of xenon with indium and oxygen atoms and anionic vacancies. The intercalation of xenon ions into the octahedral positions of indium oxide led to the formation of an interstitial solid solution based on indium oxide along the depth of the sample. The energy of defect formation in the structure of indium oxide after irradiation of the samples was found to depend on the dose of xenon ions and the irradiation energy. Experimental and theoretical calculations were made to determine the lattice parameter and ionic radius of xenon in the XeO2 compound. The correct formation mechanism of an interstitial solid solution based on indium oxide was found. A mathematical model that explains the increase in the reflected x-ray intensity of indium oxide lines over the depth of the sample after irradiation with xenon ions was calculated.
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Translated from Novye Ogneupory, No. 11, pp. 39 – 47, November, 2022.
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Solovyeva, A.E. Structural Changes in Polycrystalline Indium Oxide After Irradiation with Xenon Ions. Refract Ind Ceram 63, 634–641 (2023). https://doi.org/10.1007/s11148-023-00783-4
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DOI: https://doi.org/10.1007/s11148-023-00783-4