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The Influence of Xenon and Argon Ion Irradiation Parameters on Defect Formation in Silicon

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Abstract

Single-crystal silicon has been irradiated with xenon ions at energies of 100 and 200 keV and argon ions at 110 keV. The irradiation fluence varied in the range of the displacement per atom (dpa) from 0.1 to 1 for both types of ions and selected energies. The influence of irradiation on the destruction of the silicon structure was studied using Rutherford backscattering (RBS) combined with channeling and Raman scattering (RS). The stages of silicon crystal structure destruction based on RBS and RS for different irradiation fluences are demonstrated. It is shown that defects accumulate in the modified layer as the fluence increases to a value corresponding to 0.5 dpa; then highly defective regions merge into amorphous layers. At a dpa of 1, the structure of a single crystal does not become disordered.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 18-32-00833 mol-a.

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Authors and Affiliations

  1. Institute of Nuclear Physics, Moscow State University, 119991, Moscow, Russia

    Yu. V. Balakshin, A. P. Evseev & D. K. Minnebaev

  2. Quantum Technology Center, Moscow State University, 119991, Moscow, Russia

    Yu. V. Balakshin

  3. Department of Physics, Moscow State University, 119991, Moscow, Russia

    A. V. Kozhemiako, A. P. Evseev & D. K. Minnebaev

  4. Damanhour University, Faculty of Science, Damanhour, Egypt

    Emad M. Elsehly

Authors
  1. Yu. V. Balakshin
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  2. A. V. Kozhemiako
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  3. A. P. Evseev
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  4. D. K. Minnebaev
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  5. Emad M. Elsehly
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Corresponding author

Correspondence to Yu. V. Balakshin.

Additional information

Translated by O. Pismenov

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Balakshin, Y.V., Kozhemiako, A.V., Evseev, A.P. et al. The Influence of Xenon and Argon Ion Irradiation Parameters on Defect Formation in Silicon. Moscow Univ. Phys. 75, 218–224 (2020). https://doi.org/10.3103/S0027134920030030

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  • DOI: https://doi.org/10.3103/S0027134920030030

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